SANYO FSS107 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6447

FSS107

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

Marking : S107

D

D

SG

R

SD

R

SD

Package Dimensions

unit:mm

2116

[FSS107]

58

0.3

4.4

14

5.0

1.8max

1.5

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %184–A

PD

Mounted on a ceramic board (1000mm2×0.8mm)

SSD)RB(
SSD
SSG

)ffo(VSDI,V01–=

1)no(IDV,A8–=

2)no(IDV,A5–=

I

D

V
V

V,Am1–=

0=02–V

SG

V,V02–=

SD
SG

0=01–Aµ

SG

V,V8±=

0=01±Aµ

SD

Am1–=4.0–3.1–V

D

A8–=5152S

D

V4–=8132mΩ

SG

V5.2–=6273mΩ

SG

0.43

0.1

nimpytxam

6.0

1 : Source
2 : Source
3 : Source

0.2

4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain

SANYO : SOP8

sgnitaR

Continued on next page.

02–V
01±V
8–A

0.2W

˚C
˚C

tinU

81000TS (KOTO) TA-2771 No.6447-1/4

FSS107

Continued from preceding page.

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ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

V,A8–=

S

Switching Time Test Circuit

VDD= --10V

V

0V

--4V

PW=10µs
D.C.≤1%

IN

V

IN

G

D

ID= --8A

RL=1.25Ω

V

OUT

zHM1=f,V01–=0042Fp
zHM1=f,V01–=0021Fp
zHM1=f,V01–=006Fp

tiucriCtseTdeificepseeS04sn
tiucriCtseTdeificepseeS053sn
tiucriCtseTdeificepseeS002sn
tiucriCtseTdeificepseeS042sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

0=0.1–5.1–V

SG

sgnitaR

nimpytxam

A8–=09Cn

D

A8–=8Cn

D

A8–=61Cn

D

tinU

--8

--7

--6

–A

--5

D

--4

P.G

--4.0V

--6.0V

--2.5V

--3.0V

50Ω

--2.0V

I

D

-- V

DS

FSS107

S

--8.0V

--3

Drain Current, I

--2

--1

0

0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8

Drain-to-Source Voltage, VDS–V

70

60

RDS(on) -- V

GS

–mΩ

50

(on)

ID= --5A

DS

40

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10

--8A

Gate-to-Source Voltage, VGS–V

I

-- V

--10

VDS= --10V

--9

--8

--7

–A

D

--6

--5

V

= --1.5V

GS

IT01720

Ta=25°C

IT01722 IT01723

--4

--3

Drain Current, I

--2

--1
0

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --2.0--1.8

Gate-to-Source Voltage, VGS–V

50

40

–mΩ

(on)

DS

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 160140

Ambient Temperature, Ta – ˚C

D

RDS(on) -- Ta

= --5A, V

I

D

I

D

= --8A, V

GS

GS

GS

Ta=75

= --2.5V

= --4.0V

C

°

°C

--25

C

°

25

IT01721

No.6447-2/4