SANYO FSS106 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

DC/DC Converter Applications

Ordering number:ENN6476

FSS106

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

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erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

Marking : S106

D

D

SG

R

SD

R

SD

Package Dimensions

unit:mm

2116

[FSS106]

58

0.3

4.4

14

5.0

1.8max

1.5

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %123–A

PD

Mounted on a ceramic board (1000mm2×0.8mm)

SSD)RB(
SSD
SSG

)ffo(VSDI,V01–=

1)no(IDV,A7–=

2)no(IDV,A4–=

I

D

V
V

V,Am1–=

0=03–V

SG

V,V03–=

SD
SG

0=01–Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1–=0.1–5.2–V

D

A7–=701S

D

V01–=3203mΩ

SG

V4–=7466mΩ

SG

0.43

0.1

nimpytxam

6.0

1 : Source
2 : Source
3 : Source

0.2

4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain

SANYO : SOP8

sgnitaR

Continued on next page.

03–V
02±V
7–A

0.2W

˚C
˚C

tinU

81000TS (KOTO) TA-2753 No.6476-1/4

FSS106

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

V,A7–=

S

Switching Time Test Circuit

VDD= --15V

D

ID= --7A
RL=2.1Ω

V

OUT

V

0V

--10V

PW=10µs
D.C.≤1%

IN

V

IN

G

zHM1=f,V01–=0051Fp
zHM1=f,V01–=008Fp
zHM1=f,V01–=073Fp

tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS051sn
tiucriCtseTdeificepseeS061sn
tiucriCtseTdeificepseeS051sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

0=0.1–5.1–V

SG

sgnitaR

nimpytxam

A7–=54Cn

D

A7–=4Cn

D

A7–=31Cn

D

tinU

--10

--8

–A

--6

D

--4

P.G

--8.0V

--10.0V

--6.0V

50Ω

I

D

-- V

--4.0V

DS

FSS106

S

Drain Current, I

--2

0

0 --0.2 --0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9

Drain-to-Source Voltage, VDS–V

100

90

80

–mΩ

70

(on)

DS

60

--4A

50

40

30

20

Static Drain-to-Source

On-State Resistance, R

10

0

0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20

RDS(on) -- V

ID= --7A

GS

Gate-to-Source Voltage, VGS–V

--3.5V

--3.0V

VGS=--2.5V

IT01789

Ta=25°C

IT01791

I

-- V

--16

VDS= --10V

--14

--12

–A

--10

D

--8

--6

Drain Current, I

--4

--2

0

0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0

D

GS

Ta=75

C

°

--25

Gate-to-Source Voltage, VGS–V

80

70

–mΩ

60

(on)

DS

50

40

30

20

Static Drain-to-Source

On-State Resistance, R

10

--60 --40 --20 0 4020 60 80 100 160140120

RDS(on) -- Ta

= --4V

GS

= --4A, V

I

D

GS

= --7A, V

I

D

= --10V

Ambient Temperature, Ta – ˚C

C

°

25

C

°

IT01790

IT01792

No.6476-2/4