SANYO FSS104 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

DC/DC Converter Applications

Ordering number:ENN5991A

FSS104

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : S104

D

D

R
R

Package Dimensions

unit:mm

2116

[FSS104]

58

0.3

4.4

14

5.0

1.8max

1.5

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %123–A

PD

Mounted on a ceramic board (1200mm2×0.8mm)

SSD
SSG

)ffo(SG

1IDV,A6–=

)no(SD

2IDV,A3–=

)no(SD

I

SSD)RB(

D

V
V
V

V,Am1–=

0=03–V

SG

V,V03–=

SD
SG
SD

SD
SD
SD

0=01–Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01–=

Am1–=0.1–5.2–V

D

A6–=69S

D

V01–=0383mΩ

SG

V4–=2658mΩ

SG

zHM1=f,V01–=0011Fp
zHM1=f,V01–=046Fp
zHM1=f,V01–=013Fp

0.43

0.1

nimpytxam

6.0

1 : Source
2 : Source
3 : Source

0.2

4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain

SANYO : SOP8

sgnitaR

Continued on next page.

03–V
02±V
6–A

0.2W

˚C
˚C

tinU

31000TS (KOTO) TA-2374 No.5991-1/4

FSS104

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

I

V,A6–=

DS

S

0=18.0–5.1–V

SG

Switching Time Test Circuit

tiucriCtseTdeificepseeS71sn
tiucriCtseTdeificepseeS071sn
tiucriCtseTdeificepseeS031sn
tiucriCtseTdeificepseeS531sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

sgnitaR

nimpytxam

A6–=04Cn

D

A6–=5Cn

D

A6–=01Cn

D

tinU

V

IN

0V

–10V

V

IN

PW=10µs
D.C.≤1%

G

P.G

-7

–8.0V

-6

-5

–A

D

-4

-3

-2

Drain Current, I

-1

0

–10.0V

0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -0.5 -1.0 -1.5 -2.0 -4.0-2.5 -3.0 -3.5

50Ω

–6.0V

Drain-to-Source Voltage, VDS–V

|

10

fs|–S

y

1.0

3

VDS=–10V

2

7
5

3
2

7
5

3
2

Forward Transfer Admittance, |

0.1
23 57

-0.01

-0.1

VDD=–15V

ID-

–4.0V

y

fs

|

23 57

ID=–6A
RL=2.5Ω

D

S

V

DS

-

I

Ta=–25°C

-1.0

V

OUT

FSS104

–3.5V

D

75°C

23 2357

V

GS

25

-10

–3.0V

=–2.5V

°C

-12

VDS=–10V

-10

-8

–A

D

-6

-4

Drain Current, I

-2

0

Gate-to-Source Voltage, VGS–V

100

90

80

I

–mΩ

70

60

DS(on)

50

40

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

ID=–6A

=–3A

D

-20 -4 -6 -8 -10 -12 -14 -16 -18 -20

R

DS(on)

ID-

V

-

GS

°C

25

V

GS

Drain Current, ID– A Gate-to-Source Voltage, VGS–V

75°C

Ta=–25°C

Ta=25°C

No.5991-2/4