SANYO FSS101 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Load S/W Applications

Ordering number:ENN5984A

FSS101

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Package Dimensions

unit:mm

2116

[FSS101]

58

0.3

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : S101

D

R
R

4.4

6.0

1 : Source
2 : Source

14

5.0

1.27

0.595

0.43

1.8max

1.5

0.1

0.2

3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain

SANYO : SOP8

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %123–A

PD

Mounted on a ceramic board (1200mm2×0.8mm)

D

sgnitaR

nimpytxam

SSD
SSG

)ffo(SG

1IDV,A5–=

)no(SD

2IDV,A2–=

)no(SD

I

SSD)RB(

D

V
V
V

V,Am1–=

0=02–V

SG

V,V02–=

SD
SG
SD

SD
SD
SD

0=01–Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01–=

Am1–=4.0–4.1–V

D

A5–=0161S

D

V4–=4485mΩ

SG

V5.2–=5689mΩ

SG

zHM1=f,V01–=089Fp
zHM1=f,V01–=005Fp
zHM1=f,V01–=012Fp

Continued on next page.

02–V
01±V
5–A

8.1W

˚C
˚C

tinU

31000TS (KOTO) TA-2319 No.5984-1/4

FSS101

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

I

V,A5–=

DS

S

0=0.1–5.1–V

SG

Switching Time Test Circuit

tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS511sn
tiucriCtseTdeificepseeS011sn
tiucriCtseTdeificepseeS501sn
I,V01–=

SG
SG
SG

D

I,V01–=

D

I,V01–=

D

sgnitaR

nimpytxam

A5–=03Cn
A5–=5Cn
A5–=7Cn

tinU

V

IN

0V

–4V

PW=10µs
D.C.≤1%

P.G

-6

-5

–6.0V

V

IN

G

50Ω

–4.0V

–3.0V

–8.0V

-4

–A

D

-3

-2

Drain Current, I

-1

0

0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -0.5 -1.0 -1.5 -2.0 -2.5

Drain-to-Source Voltage, VDS–V

100

7
5

3

fs|–S

2

y

10

7
5

3
2

1.0
7
5

3
2

Forward Transfer Admittance, |

0.1

23 57

-0.01

|

-0.1

Drain Current, ID–A

VDD=–10V

ID-

–2.5V

–2.0V

y

fs

|

23 57

D

V

-

Ta=

ID=–5A
RL=2Ω

S

DS

–

-1.0

V

OUT

FSS101

I

D

25°C

°C

75

23 2357

=–1.5V

V

GS

VDS=–10V

°C

25

-10

-10

VDS=–10V

-9

-8

-7

–A

D

-6

-5

-4

-3

Drain Current, I

-2

-1

0

100

90

80

I

–mΩ

DS(on)

Static Drain-to-Source

On-State Resistance, R

=–2A

D

70

60

50

40

30

20

10

0

-10 -2-3-4-5-6-7-8-9-10

ID-

V

GS

°C

75°C

°C

25

Ta=–25

Gate-to-Source Voltage, VGS–V

I

D

R

DS(on)

=–5A

-

V

GS

Gate-to-Source Voltage, VGS–V

Ta=25°C

No.5984-2/4