SANYO FP502 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number:EN5263

FP502

N-Channel Silicon MOSFET

Silicon Schottky Barrier Diode

DC-DC Converter Applications

Features

· Composite type with a high-speed N-channel
MOSFET and a low-forward voltage Schottky
barrier diode contained in the PCP4 package, saving
the mount space greatly.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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D

P

D

SSD
SSG

D

PD

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Package Dimensions

unit:mm

2132

[FP502]

Tc=25˚C, 1 unit
Mounted on ceramic board (250mm2×0.8mm) 1 unit

PW≤10µs, duty cycle ≤1%

1:Source, Anode
2:Common (Drain,
Cathode)
3:Source, Anode
4Common (Drain,
Cathode)
5:Gate
6:Common (Drain,
Cathode)
7:Common (Drain,
Cathode)

SANYO:PCP4
(Bottom view)

5.3W

5.1W

˚C

11V
01±V
2A
8A

˚C

005Am

Electrical Characteristics at Ta=25˚C

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V

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D

SD
SG
SD

D
D

SD
SD
SD

0=11V

SG

V,V4.01=

0=004Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=0.10.4V

D

A1=2.12.2S

D

V,A1=

V01=041002mΩ

SG

V,Am005=

V4=002023mΩ

SG

zHM1=f,V01=051Fp

ZHN1=f,V01=002Fp

zHM1=f,V01=54Fp

52098HA(KT) 71096YK (KOTO) TA-0623 No.5263-1/4

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Continued on next page.

FP502

Continued from preceding page.

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Am005=4.054.0V

F

I

F

Switching Time Test Circuit Electrical Connection

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1:Source, Anode
2:Common (Drain, Cathode)
3:Source, Anode
4Common (Drain, Cathode)
5:Gate
6:Common (Drain, Cathode)
7:Common (Drain, Cathode)

(Top view)

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No.5263-2/4