SANYO FP502 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number:EN5263
FP502
N-Channel Silicon MOSFET
Silicon Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type with a high-speed N-channel
MOSFET and a low-forward voltage Schottky
barrier diode contained in the PCP4 package, saving
the mount space greatly.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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D
P
D
SSD
SSG
D
PD
O
Package Dimensions
unit:mm
2132
[FP502]
Tc=25˚C, 1 unit
Mounted on ceramic board (250mm2×0.8mm) 1 unit
PW≤10µs, duty cycle ≤1%
1:Source, Anode
2:Common (Drain,
Cathode)
3:Source, Anode
4Common (Drain,
Cathode)
5:Gate
6:Common (Drain,
Cathode)
7:Common (Drain,
Cathode)
SANYO:PCP4
(Bottom view)
5.3W
5.1W
˚C
11V
01±V
2A
8A
˚C
005Am
Electrical Characteristics at Ta=25˚C
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V
SSD
V
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V
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)no(SD
I
)no(SD
V,Am1=
D
SD
SG
SD
D
D
SD
SD
SD
0=11V
SG
V,V4.01=
0=004Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Am1=0.10.4V
D
A1=2.12.2S
D
V,A1=
V01=041002mΩ
SG
V,Am005=
V4=002023mΩ
SG
zHM1=f,V01=051Fp
ZHN1=f,V01=002Fp
zHM1=f,V01=54Fp
52098HA(KT) 71096YK (KOTO) TA-0623 No.5263-1/4
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Continued on next page.
FP502
Continued from preceding page.
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Am005=4.054.0V
F
I
F
Switching Time Test Circuit Electrical Connection
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1:Source, Anode
2:Common (Drain, Cathode)
3:Source, Anode
4Common (Drain, Cathode)
5:Gate
6:Common (Drain, Cathode)
7:Common (Drain, Cathode)
(Top view)
tinU
No.5263-2/4
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