SANYO FP401 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N-Channel MOS Silicon FET
Very High-Speed
Switching Applications
Ordering number:EN4632
FP401
Features
· Low ON resistance.
· Very high-speed switching.
· Composite type with 2 low-voltage-drive N-channel
MOSFETs facilitating high-density mounting.
Electrical Connection
1:Gate
2:Drain
3:Source
4:Drain
5:Gate
6:Drain
7:Drain
Package Dimensions
unit:mm
2102A
[FP401]
1:Gate
2:Drain
3:Source
4:Drain
5:Gate
6:Drain
7:Drain
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollA
noitapissiDrewoPlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta=25˚C
retemaraPlobmySsnotidnoC
egatloVnwodkaerBS-DV
tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfY|VSDI,V01=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatSR
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
Marking:401
SSD
SSG
D
PW≤10µs, duty cycle ≤1%
PD
P
Tc=25˚C, 1 unit
D
Mounted on ceramic board (250mm2×0.8mm) 1 unit
P
D
Mounted on ceramic board (250mm2×0.8mm)
T
I
V,Am1=
SSD)RB(
D
V
SSD
SSG
r
f
DS
SD
V
SG
V
)ffo(SG
SD
I
)no(SD
D
SD
SD
SD
)no(d
)ffo(d
I
S
0=052V
SG
V,V052=
0=001Aµ
SG
V,V81±=
0=01±Aµ
SD
I,V01=
Am1=5.15.2V
D
Am002=072004Sm
D
V,Am002=
V01=821
SG
zHM1=f,V02=73Fp
zHM1=f,V02=01Fp
zHM1=f,V02=4Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS53sn
tiucriCtseTdeificepseeS54sn
V,Am004=
0=0.1V
SG
SANYO:PCP5
(Bottom view)
sgnitaR
nimpytxam
052V
02±V
004Am
6.1A
0.2W
8.0W
1.1W
˚C
˚C
tinU
Ω
52098HA (KT)/82494MT (KOTO) BX-0301 No.4632-1/3
Switching Time Test Circuit
FP401
No.4632-2/3
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