SANYO FP304 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
TR:NPN Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter
Ordering number:EN4926
FP304
Features
· Complex type with an NPN transistor and a
Schottoky barrier diode facilitating high-density
mounting.
· The FP304 is composed of 2 chips, one being
equivalent to the 2SD1620 and the other the SB0703C, placed in one package.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
]DBS[
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egatloVegruSesreveRkaePevititeper-noNV
tnerruCdeifitceRegarevAI
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
C
PC
B
C
O
MSF
Package Dimensions
unit:mm
2099A
OBC
OEC
OBE
Mounted on ceramic board (250mm
MRR
MSR
[FP304]
1:Base
2:Collector
3:Emitter
4:Cathode
5:Anode
6:Cathode
7:Collector
SANYO:PCP5
(Bottom view)
03V
01V
6V
3A
5A
2
×0.8mm)
elcyc1,evaweniszH05 5A
005Am
8.0W
˚C
03V
53V
007Am
˚C
˚C
Electrical Connection
1:Base
2:Collector
3:Emitter
4:Cathode
5:Anode
6:Cathode
7:Collector
(Top view)
52098HA (KT)/41095TS (KOTO) BX-1457 No.4926-1/4
Continued on next page.
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
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egatloVnoitarutaSE-BV
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]DBS[
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emiTyrevoceResreveRt
ecnatsiseRlamrehTa-jhtR 071
V
OBC
OBE
hEF1VECI,V2=
hEF2VECI,V2=
T
R
F
R
rr
BC
V
BE
V
EC
BC
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
R
I
F
VRV51= 08Aµ
R
IFI=
Mounted on ceramic board (250mm2×0.8mm)
FP304
sgnitaR
nimpytxam
I,V02=
0=1.0Aµ
E
I,V4=
0=1.0Aµ
C
Am005=002
C
A3=041
C
I,V01=
Am05=
C
zHM1=f,V01=
I,A3=
Am06=
B
I,A3=
Am06=59.053.1V
B
I,Aµ01=
0=03V
E
R,Am1=
=∞ 01V
EB
I,Aµ01=
0=6V
C
Aµ003=03V
Am007= 55.0V
zHM1=f,V01=82Fp
R
.tiucriCtseTdeificpeseeS,Am001= 01sn
002zHM
03Fp
3.04.0V
tinU
˚C/W
Marking:304
No.4926-2/4
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