SANYO FP212 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Driver Applications
Ordering number:EN4497
FP212
Features
· Composite type with a PNP transistor and an NPN transistor, in one package, facilitating high-density mounting.
· The FP212 is composed of 2 chips, one being equivalent to the 2SA1370 and the other the 2SC3467, placed in one package.
Electrical Connection
1:Base 2:Collector 3:Emitter Common 4:Collector 5:Base 6:Collector 7:Collector
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
noitapissiDrewoPlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC OEC OBE
C
PC
B
C T
Package Dimensions
unit:mm
2097A
2
Mounted on ceramic board (250mm Mounted on ceramic board (250mm2×0.8mm)
×0.8mm) 1 unit
[FP212]
1:Base 2:Collector 3:Emitter Common 4:Collector 5:Base 6:Collector 7:Collector
SANYO:PCP5 (Bottom view)
002)–(V
002)–(V
5)–(V
001)–(Am
002)–(Am
01)–(Am
57.0W
0.1W
˚C ˚C
Electrical Characteristics at Ta=25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
egatloVnoitarutaSE-CV egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV egatloVnwodkaerBE-CV egatloVnwodkaerBB-EV
h
V
OBC OBE
EF
T
BC
V
BE
V
EC
V
EC BC
BC
IC=m02)–(I,AB=2)–(Am
)tas(EC
IC=m02)–(I,AB=2)–(Am0.1)–(V
)tas(EB
IC=)–(I,Aµ01
OBC)RB(
IC=)–(R,Am1
OEC)RB(
IE=)–(I,Aµ01
OBE)RB(
I,V051)–(=
0=001)–(An
E
I,V4)–(=
0=001)–(An
C
I,V01)–(=
C
I,V03)–(=
C
E
C
Am01)–(=06002 Am01)–(=
zHM1=f,V03)–(=)6.2(
zHM1=f,V03)–(=)7.1(
0=002)–(V
= 002)–(V
EB
0=5)–(V
nimpytxam
Marking:212
52098HA (KT)/82494MT (KOTO) A8-9729 No.4497-1/4
sgnitaR
051zHM
7.1
2.1
6.0)–(V
tinU
Fp
Fp
FP212
No.4497-2/4
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