SANYO FP211 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Transistor
Driver Applications
Ordering number:EN4538
FP211
Features
· Composite type with 2 transistors (NPN) contained in one package, facilitating high-density mounting.
· The FP211 is formed with 2 chips being equivalent to the 2SD1623, placed in one package.
Electrical Connection
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2097A
[FP211]
1:Base (NPN TR) 2, 7:Collector (NPN TR) 3:Emitter Common 4, 6:Collector (NPN TR) 5:Base (NPN TR)
(Top view)
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC OEC OBE
C
PC
B
Mounted on ceramic board (250mm
C
Mounted on ceramic board (250mm2×0.8mm)
T
2
×0.8mm) 1 unit
1:Base (NPN TR) 2, 7:Collector (NPN TR) 3:Emitter Common 4, 6:Collector (NPN TR) 5:Base (NPN TR)
SANYO:PCP5 (Bottom view)
06V 05V 6V 2A 4A 004Am
8.0W
1.1W
˚C ˚C
Electrical Characteristics at Ta=25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV egatloVnwodkaerBE-CV egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
h
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E no gts
f
I,V05=
BC BE EC EC BC
0=001An
E
I,V4=
0=001An
C
I,V2=
Am001=041004
C
I,V01=
Am05=
C
zHM1=f,V01=
I,A1=
Am05=
B
I,A1=
Am05=9.02.1V
B
I,Aµ01=
0=06V
E
R,Am1=
= 05V
EB
I,Aµ01=
0=6V
C
tiucriCtseTdeificepseeS06sn tiucriCtseTdeificepseeS055sn tiucriCtseTdeificepseeS03sn
nimpytxam
Marking:211
52098HA (KT)/53094TH (KOTO) BX-0215 No.4538-1/3
sgnitaR
051zHM 21Fp
51.04.0V
tinU
Switching Time Test Circuit
FP211
No.4538-2/3
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