SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Transistor
Driver Applications
Ordering number:EN4536
FP209
Features
· Composite type with 2 transistors (NPN) contained
in one package, facilitating high-density mounting.
· The FP209 is formed with 2 chips being equivalent
to the 2SD1621, placed in one package.
Electrical Connection
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2097A
[FP209]
1:Base (NPN TR)
2, 7:Collector (NPN TR)
3:Emitter Common
4, 6:Collector (NPN TR)
5:Base (NPN TR)
(Top view)
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
B
Mounted on ceramic board (250mm
C
Mounted on ceramic board (250mm2×0.8mm)
T
2
×0.8mm) 1unit
1:Base (NPN TR)
2, 7:Collector (NPN TR)
3:Emitter Common
4, 6:Collector (NPN TR)
5:Base (NPN TR)
SANYO:PCP5
(Bottom view)
03V
52V
6V
2A
5A
004Am
8.0W
1.1W
˚C
˚C
Electrical Characteristics at Ta=25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
h
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
f
I,V02=
BC
BE
EC
EC
BC
0=001An
E
I,V4=
0=001An
C
I,V2=
Am001=041004
C
I,V01=
Am05=
C
zHM1=f,V01=
I,A5.1=
Am57=
B
I,A5.1=
Am57=58.02.1V
B
I,Aµ01=
0=03V
E
R,Am1=
=∞ 52V
EB
I,Aµ01=
0=6V
C
tiucriCtseTdeificepseeS06sn
tiucriCtseTdeificepseeS005sn
tiucriCtseTdeificepseeS52sn
nimpytxam
Marking:209
52098HA (KT)/53094TH (KOTO) BX-0215 No.4536-1/3
sgnitaR
051zHM
91Fp
81.04.0V
tinU
Switching Time Test Circuit
FP209
No.4536-2/3