SANYO FP201 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Composite Transistors
High-Frequency Amp,
Differential Amp Applications
Ordering number:EN4697
FP201
Features
· Composite type with 2 transistors contained in the
PCP package currently in use, improving the mounting efficiency greatly.
· The FP201 is formed with two chips, being equivalent to the 2SC4504, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
1:Base (NPN TR)
2:Collector (NPN TR)
3:Emitter Common
4:Collector (NPN TR)
5:Base (NPN TR)
6:Collector (NPN TR)
7:Collector (NPN TR)
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
Mounted on ceramic board (250mm2×0.8mm) 1unit
C
Mounted on ceramic board (250mm
T
Package Dimensions
unit:mm
2107A
[FP201]
2
×0.8mm)
1:Base (NPN TR)
2:Collector (NPN TR)
3:Emitter Common
4:Collector (NPN TR)
5:Base (NPN TR)
6:Collector (NPN TR)
7:Collector (NPN TR)
SANYO:PCP5
(Bottom view)
03V
02V
3V
003Am
006Am
57.0W
0.1W
˚C
˚C
Electrical Characteristics at Ta=25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
oitaRniaGtnerruCCDh
ecnereffiDegatloVrettimE-ot-esaBV
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
hEF1VECI,V5=
hEF2VECI,V5=
EF
EB
V
OBC
V
OBE
-lams(1
V
)egral/l
-egral(
V
llams
V
T
I
)tas(EC
C
I
)tas(EB
C
I,V02=
BC
BE
EC
EC
EC
BC
BC
0=0.1Aµ
E
I,V2=
0=0.5Aµ
C
Am05=06002
C
Am003=02
C
I,V5=
Am05=7.059.0
C
I,V5=
Am001=0.351Vm
C
I,V5=
Am05=2.2zHG
C
zHM1=f,V01=9.2Fp
zHM1=f,V01=6.2Fp
I,Am002=
Am02=2.05.0V
B
I,Am002=
Am02=9.02.1V
B
nimpytxam
Note:The specifications shown above are for each individual transistor.
However, the DC Current Gain Ratio and Base Emitter to Voltage Difference are for the paired transistors.
Marking:201
52098HA (KT)/41594HO (KOTO) BX-0511 No.4697-1/3
sgnitaR
tinU
FP201
No.4697-2/3
Loading...