SANYO FP108 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Ordering number:EN5100
Features
· Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting.
· The FP108 is formed with 2 chips, one being equivalent to the 2SB1121 and the other the SB01­015CP, placed in one package.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
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egatloVegruSesreveRkaePevititeper-noNV
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erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
Marking:108
Electrical Connection
1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode)
OBC OEC OBE
C
PC
B
Mounted on ceramic board (250mm2×0.8mm)
C
MRR MSR
O
MSF
Package Dimensions
unit:mm
2088A
[FP108]
1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode)
SANYO:PCP4 (Bottom view)
03–V 52–V 6–V 2–A 5–A 004–Am
3.1W
˚C ˚C
51V 71V 1A
elcyc1,evaweniszH05 8A
˚C ˚C
Continued on next page.
52098HA (KT)/63095MO (KOTO) TA-0316 No.5100-1/4
FP108
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
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egatloVnoitarutaSE-CV egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV egatloVnwodkaerBE-CV egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSgtsttiucriCtseTdeificepseeS053sn
emiTllaFfttiucriCtseTdeificepseeS52sn
]DBS[
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
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ecnatsiseRlamrehTa-jhtR 021
hEF1VECI,V2–= hEF2VECI,V2–=
V
OBC
V
OBE
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
I
R
R
IFA1= 55.0V
F
VRV5.7= 05Aµ
R
R
IFI=
rr
Mounted on ceramic board (250mm2×0.8mm)
I,V02–=
BC BE
EC EC
R
0=1.0–Aµ
E
I,V4–=
0=1.0–Aµ
C C C
I,A5.1–=
B
I,A5.1–=
B I,Aµ01–=
E
R,Am1–=
Aµ003=51V
Am001–=041004
A5.1–=56
I,V01–=
Am05–=051zHM
C
zHM1=f,V01–=23Fp
Am57–=53.0–6.0–V Am57–=58.0–2.1–V
0=03–V
= 52–V
EB
0=CI,Aµ01–=6–V
tiucriCtseTdeificepseeS06sn
zHM1=f,V01=03Fp
tiucriCtseTdeificepseeS,Am001= 01sn
nimpytxam
sgnitaR
tinU
˚C/W
Switching Time T est Circuit
(TR) (SBD)
No.5100-2/4
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