SANYO FP106 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Ordering number:EN4552
Features
· Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating high­density mounting.
· The FP106 is composed of 2 chips, one being equivalent to the 2SA1898 and the other the SB10­05C.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
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egatloVegruSesreveRkaePevititeper-noNV
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erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
Marking:106
Electrical Connection
1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode)
OBC OEC OBE
C
PC
B
C
MRR MSR
O
MSF
Package Dimensions
unit:mm
2088A
Mounted on ceramic board (250mm2×0.8mm)
elcyc1,evaweniszH05 8A
[FP106]
1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode)
SANYO:PCP4 (Bottom view)
51–V 51–V 5–V 3–A 5–A 006–Am
3.1W
˚C ˚C
51V 71V 1A
˚C ˚C
Continued on next page.
52098HA (KT)/30395MT (KOTO) BX-0044 No.4552-1/4
FP106
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
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egatloVnoitarutaSE-CV egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV egatloVnwodkaerBE-CV egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSgtsttiucriCtseTdeificepseeS001sn
emiTllaFt
]DBS[
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveRt
ecnatsiseRlamrehTa-jhtR 021
hEF1VECI,V2–= hEF2VECI,V2–=
V
OBC
V
OBE
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
f
I
R
R
IFA1= 55.0V
F
VRV5.7= 05Aµ
R
R
IFI=
rr
Mounted on ceramic board (250mm2×0.8mm)
I,V21–=
BC BE
EC EC
R
0=1–Aµ
E
I,V3–=
0=1–Aµ
C
A5.0–=001082
C
A3–=05
C
I,V2–=
A3.0–=003zHM
C
zHM1=f,V01–=82Fp
I,A5.1–=
Am57–=52.0–5.0–V
B
I,A5.1–=
Am57–=59.0–2.1–V
B I,Aµ01–=
0=51–V
E
R,Am1–=
= 51–V
EB
0=CI,Aµ01–=5–V
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS021sn
Aµ003=51V
zHM1=f,V01=03Fp
sgnitaR
nimpytxam
tiucriCtseTdeificepseeS,Am001= 01sn
˚C/W
tinU
Switching Time T est Circuit
(TR) (SBD)
No.4552-2/4
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