SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Ordering number:EN4552
FP106
Features
· Complex type with a PNP transistor and a Shottky
barrier diode in one package, facilitating highdensity mounting.
· The FP106 is composed of 2 chips, one being
equivalent to the 2SA1898 and the other the SB1005C.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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]RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
]DBS[
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititeper-noNV
tnerruCdeifitceRegarevAI
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
Marking:106
Electrical Connection
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
OBC
OEC
OBE
C
PC
B
C
MRR
MSR
O
MSF
Package Dimensions
unit:mm
2088A
Mounted on ceramic board (250mm2×0.8mm)
elcyc1,evaweniszH05 8A
[FP106]
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
SANYO:PCP4
(Bottom view)
51–V
51–V
5–V
3–A
5–A
006–Am
3.1W
˚C
˚C
51V
71V
1A
˚C
˚C
Continued on next page.
52098HA (KT)/30395MT (KOTO) BX-0044 No.4552-1/4
FP106
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
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]RT[
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSgtsttiucriCtseTdeificepseeS001sn
emiTllaFt
]DBS[
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveRt
ecnatsiseRlamrehTa-jhtR 021
hEF1VECI,V2–=
hEF2VECI,V2–=
V
OBC
V
OBE
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
f
I
R
R
IFA1= 55.0V
F
VRV5.7= 05Aµ
R
R
IFI=
rr
Mounted on ceramic board (250mm2×0.8mm)
I,V21–=
BC
BE
EC
EC
R
0=1–Aµ
E
I,V3–=
0=1–Aµ
C
A5.0–=001082
C
A3–=05
C
I,V2–=
A3.0–=003zHM
C
zHM1=f,V01–=82Fp
I,A5.1–=
Am57–=52.0–5.0–V
B
I,A5.1–=
Am57–=59.0–2.1–V
B
I,Aµ01–=
0=51–V
E
R,Am1–=
=∞ 51–V
EB
0=CI,Aµ01–=5–V
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS021sn
Aµ003=51V
zHM1=f,V01=03Fp
sgnitaR
nimpytxam
tiucriCtseTdeificepseeS,Am001= 01sn
˚C/W
tinU
Switching Time T est Circuit
(TR) (SBD)
No.4552-2/4