SANYO FP105 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Ordering number:EN4656
FP105
Features
· Composite type with a PNP transistor and a Shottky
barrier diode contained in one package, facilitating
high-density mounting.
· The FP105 is formed with 2 chips, one being
equivalent to the 2SB1123 and the other the SB0505CP, placed in one package.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
]DBS[
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititeper-noNV
tnerruCdeifitceRegarevAI
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
Marking:105
Electrical Connection
OBC
OEC
OBE
C
PC
B
Mounted on ceramic board (250mm2×0.8mm)
C
MRR
MSR
O
MSF
Package Dimensions
unit:mm
2088A
[FP105]
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
SANYO:PCP4
(Bottom view)
06–V
05–V
6–V
2–A
4–A
004–Am
3.1W
˚C
05V
55V
005Am
elcyc1,evaweniszH05 5A
˚C
˚C
Continued on next page.
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
52098HA (KT)/62094MT (KOTO) AX-9348 No.4656-1/4
FP105
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
retemaraP.lobmySsnotidnoC
]RT[
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSgtsttiucriCtseTdeificepseeS054sn
emiTllaFt
]DBS[
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveRt
ecnatsiseRlamrehTa-jhtR 021
hEF1VECI,V2–=
hEF2VECI,V2–=
V
OBC
V
OBE
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
f
I
R
R
I
F
F
VRV52= 05Aµ
R
R
IFI=
rr
Mounted on ceramic board (250mm2×0.8mm)
I,V05–=
BC
BE
EC
EC
R
0=1.0–Aµ
E
I,V4–=
0=1.0–Aµ
C
C
C
I,A0.1–=
B
I,A0.1–=
B
I,Aµ01–=
E
R,Am1–=
Aµ002=05V
Am005= 55.0V
Am001–=041065
A5.1–=04
I,V01–=
Am05–=051zHM
C
zHM1=f,V01–=22Fp
Am05–=3.0–7.0–V
Am05–=9.0–2.1–V
0=06–V
=∞ 05–V
EB
0=CI,Aµ01–=6–V
tiucriCtseTdeificepseeS06sn
tiucriCtseTdeificepseeS03sn
zHM1=f,V01=22Fp
sgnitaR
nimpytxam
tiucriCtseTdeificepseeS,Am001= 01sn
˚C/W
tinU
Switching Time T est Circuit
(TR) (SBD)
No.4656-2/4
Loading...