SANYO FP104 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Ordering number:EN4655
FP104
Features
· Composite type with 2devices (PNP transistor and
Shottky barrier diode) contained in one package,
facilitating high-density mounting.
· The FP104 is formed with a chips, one being
equivalent to the 2SA1729 and a chip being
eqivalent to the SB05-05CP placed in one package.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
]DBS[
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititeper-noNV
tnerruCdeifitceRegarevAI
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
Marking:202
Electrical Connection
1:Base
2,4,6,7:Common
(Collcector, Cathode)
3:Emitter
5:Anode
OBC
OEC
OBE
C
PC
B
C
MRR
MSR
O
MSF
Package Dimensions
unit:mm
2088A
Mounted on ceramic board (250mm2×0.8mm)
elcyc1,evaweniszH05 5A
[FP104]
1:Base
2,4,6,7:Common
(Collcector, Cathode)
3:Emitter
5:Anode
SANYO:PCP4
(Bottom view)
05–V
04–V
5–V
5.1–A
3–A
003–Am
3.1W
˚C
˚C
05V
55V
005Am
˚C
˚C
Continued on next page.
(Top view)
52098HA (KT)/53094TH (KOTO) A8-9345 No.4655-1/4
FP104
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
retemaraP.lobmySsnotidnoC
]RT[
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSgtsttiucriCtseTdeificepseeS021sn
emiTllaFt
]DBS[
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveRt
ecnatsiseRlamrehTa-jhtR 021
hEF1VECI,V2–=
hEF2VECI,V2–=
V
OBC
V
OBE
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
C
no
f
I
R
R
I
F
F
VRV52= 05Aµ
R
R
IFI=
rr
Mounted on ceramic board (250mm2×0.8mm)
I,V04–=
BC
BE
EC
EC
R
0=0.1–Aµ
E
I,V3–=
0=0.1–Aµ
C
C
C
I,V2–=
C
I,Aµ01–=
E
R,Am1–=
Aµ002=05V
Am005= 55.0V
Am001–=001082
A5.1–=52
Am001–=003zHM
zHM1=f,V01–=81Fp
I,Am008–=
Am04–=3.0–8.0–V
B
I,Am008–=
Am04–=9.0–3.1–V
B
0=05–V
=∞ 04–V
EB
0=CI,Aµ01–=5–V
tiucriCtseTdeificepseeS05sn
tiucriCtseTdeificepseeS051sn
zHM1=f,V01=22Fp
sgnitaR
nimpytxam
tiucriCtseTdeificepseeS,Am001= 01sn
˚C/W
tinU
Switching Time T est Circuit
(TR) (SBD)
No.4655-2/4
Loading...