SANYO FP103 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Transistor/
Composite Schottky Barrier Diode
DC-DC Converter Applications
Ordering number:EN3962
FP103
Features
· Composite type with a PNP transistor and a Shottky
barrier diode contained in one package, facilitating
high-density mounting.
· The FP103 is formed with 2chips, one being equivalent to the 2SB1121 and the other the SB07-03C,
placed in one package.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
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erutarepmeTegarotSgtsT 521+ot55–
Marking:103
Electrical Connection
OBC
OEC
OBE
C
PC
B
Mounted on ceramic board (250mm2×0.8mm)
C
MRR
MSR
O
MSF
Package Dimensions
unit:mm
2088A
[FP103]
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
SANYO:PCP4
(Bottom view)
03–V
52–V
6–V
2–A
5–A
004–Am
3.1W
˚C
03V
53V
007Am
elcyc1,evaweniszH05 5A
˚C
˚C
Continued on next page.
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector, Cathode)
(Top view)
52098HA (KT)/62094MT (KOTO) AX-8057 No.3962-1/4
FP103
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
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egatloVnoitarutaSE-BV
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emiTNO-nruTt
emiTegarotSgtsttiucriCtseTdeificepseeS053sn
emiTllaFt
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hEF1VECI,V2–=
hEF2VECI,V2–=
V
OBC
V
OBE
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
f
I
R
R
I
F
F
VRV51= 08Aµ
R
R
IFI=
rr
Mounted on ceramic board (250mm2×0.8mm)
I,V02–=
BC
BE
EC
BC
R
0=1.0–Aµ
E
I,V4–=
0=1.0–Aµ
C
C
C
I,A5.1–=
B
I,A5.1–=
B
I,Aµ01–=
E
R,Am1–=
Aµ003=03V
Am007= 55.0V
Am001–=041065
A5.1–=56
I,V01–=
Am05–=051zHM
C
zHM1=f,V01–=23Fp
Am57–=53.0–6.0–V
Am57–=58.0–2.1–V
0=03–V
=∞ 52–V
EB
0=CI,Aµ01–=6–V
tiucriCtseTdeificepseeS06sn
tiucriCtseTdeificepseeS52sn
zHM1=f,V01=82Fp
sgnitaR
nimpytxam
tiucriCtseTdeificepseeS,Am001= 01sn
˚C/W
tinU
Switching Time T est Circuit
(TR) (SBD)
No.3962-2/4
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