SANYO FH105 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Composite Transistor
High-Frequency Low-Noise Amplifier,
Differential Amplifier Applications
Ordering number:ENN6219
FH105
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Composite type with 2 transistors contained in the
MCP package currently in use, improving the
mounting efficiency greatly.
· The FH105 is formed with two chips, being equivalent to the 2SC5245, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
E2
E1B1
Tr1
Tr2
C1 B2 C2
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
Mounted on a ceramic board (250mm2×0.8mm) 1unit
C
Mounted on a ceramic board (250mm
T
Package Dimensions
unit:mm
2160
[FH105]
0.25
6
12
0.65
2.0
2
×0.8mm)
54
3
0.2
0.4250.425
1.25
0.9
2.1
0.15
0 to 0.1
0.2
1 : Collector1
2 : Base2
3 : Collector2
4 : Emitter2
5 : Emitter1
6 : Base1
SANYO : MCP6
02V
01V
5.1V
03Am
051Wm
003Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
oitaRniaGtnerruCCD
ecnereffiDegatloVrettimE-ot-esaB
h
h
V
V
OBC
V
OBE
V
EF
EF
V
)egral/llams(
EB
V
)llams-egral(
I,V01=
BC
BE
EC
EC
BC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am01=
C
I,V5=
Am01=7.059.0
C
I,V5=
Am01=0.1Vm
C
Note) The specifications shown above are for each individual transistor.
Marking : 105
N0199TS (KOTO) TA-1702 No.6219–1/5
sgnitaR
nimpytxam
09002
Continued on next page.
tinU
Continued from preceding page.
retemaraPlobmySsnoitidnoC
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuO
niaGrefsnarTdrawroF
erugiFesioN
V
T
V
boC
2
V
|e12S|
FNVECI,V5=
EC
BC
EC
Note) The specifications shown above are for each individual transistor.
Marking : 105
h
-- I
5
3
2
FE
100
7
5
3
2
DC Current Gain, h
FE
C
VCE=5V
FH105
I,V5=
C
I,V5=
C
C
sgnitaR
nimpytxam
Am01=
zHM1=f,V01=
zHG5.1=f,Am01=
811zHG
54.07.0Fp
801Bd
tinU
zHG5.1=f,Am5=4.10.3Bd
f
-- I
T
C
=5V
CE
V
1V
– GHz
T
3
2
10
7
5
3
2
10
7
5
23 57
0.1 1.0 10
5
3
2
1.0
7
5
3
2
Output Capacitance, Cob – pF
0.1
7
5
7
23 57
0.1
Collector-to-Base Voltage, VCB-- V
12
10
23 57 23 57
Cob -- V
1.0
NF -- I
CB
23 2357
C
1.0
Gain-Bandwidth Product, f
7
5
23 57 23 5 23 57
100
IT00322
f=1MHz f=1MHz
10
5
IT00324
f=1.5GHz
0.1 1.0
5
3
2
1.0
7
5
3
2
0.1
Reverse Transfer Capacitance, Cre – pF
7
5
7
23 57
0.1
Collector-to-Base Voltage, VCB-- V
12
10
Collector Current, IC–mACollector Current, IC–mA
Cre -- V
23 2357
1.0
NF -- I
CB
C
10
10
IT00323
5
IT00325
VCE=2V
f=1GHz
8
6
4
Noise Figure, NF – dB
2
0
23 357 2 2357
0.1
1.0
Collector Current, IC–mA
=1V
5V
CE
V
10
5
IT00326
8
6
4
Noise Figure, NF – dB
2
0
23 357 2 2357
0.1
1.0
Collector Current, IC–mA
10
5
IT00327
No.6219–2/5
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