SANYO FH104 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Epitaxial Planar Silicon Composite Transistor

High-Frequency Low-Noise Amplifier,

Differential Amplifier Applications

Ordering number:ENN6218

FH104

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Composite type with 2 transistors contained in the
MCP package currently in use, improving the
mounting efficiency greatly.

· The FH104 is formed with two chips equivalent to
the 2SC4853 placed in one package.

· Excellent in thermal equilibrium and pair capability.

Electrical Connection

B2B1

E2

TR1 TR2

C1 E1 C2

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

noitapissiDrotcelloCP

noitapissiDlatoTP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC
OBE

C

1 unit

C
T

Package Dimensions

unit:mm

2149

[FH104]

0.25

6

12

0.65

2.0

54

3

0.2

0.4250.425

1.25

0.9

2.1

0.15

0 to 0.1

0.2

1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6

21V
6V

5.1V
51Am
08Wm
051Wm

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

oitaRniaGtnerruCCD

ecnereffiDegatloVrettimE-ot-esaB

h
h

V

V

OBC

V

OBE

V

EF
EF

V

)egral/llams(

EB

V

)llams-egral(

I,V01=

BC
BE
EC

EC

BC

0=0.1Aµ

E

I,V1=

0=01Aµ

C

I,V1=

Am1=

C

I,V1=

Am1=7.059.0

C

I,V1=

Am1=0.1Vm

C

nimpytxam

Note) The specifications shown above are for each individual transistor. However, the ratings for hFE (small/large) and VBE (large-small) indicate pair

characteristics.

Marking : 104

D1099TS (KOTO) TA-2353 No.6218–1/4

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09002

Continued on next page.

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Continued from preceding page.

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tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuO

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erugiFesioN

3

2

100

FE

7
5

3

2

DC Current Gain, h

10

7
5

5

2

1.0

7
5

3

2

0.1

Output Capacitance, Cob – pF

7
5

57

10

8

6

4

23 23571023 5775

0.1 1.0

Collector Current, IC–mA

Cob -- V

23 57

0.1

Collector-to-Base Voltage, VCB-- V

h

FE

1.0

NF -- I

-- I

C

V

1V

CB

23 57102

C

V

T

V

boC

2

V

1

|e12S|

2

V

2

|e12S|

FNVECI,V1=

CE

=2V

IT00311

f=1MHz

IT00313

f=1GHz

FH104

EC
BC
EC
EC

sgnitaR

nimpytxam

I,V1=

Am1=

C

zHM1=f,V1=

I,V1=

C

I,V2=

C
C

zHG1=f,Am1=
zHG1=f,Am3=
zHG1=f,Am1=6.25.4Bd

f

-- I

T

C

– GHz

T

2

10

7
5

5zHG

6.00.1Fp

5.47 Bd

5.01Bd

V

CE

=2V

tinU

1V

3

2

1.0
7

5

Gain-Bandwidth Product, f

3

23 57 2 2357

14

12

–dBS21e

2

10

1.0 10

Collector Current, IC–mA

S21e

2

-- I

C

=2V

CE

V

IT00312

f=1GHz

1V

8

6

4

2

Forward Transfer Gain, S21e

0

23 57

14

12

10

8

–dB

2

6

Collector Current, IC–mA

1.0

S21e2, NF -- V

S21e

23 57

IT00314

CE

f=1GHz

IC=3mA

2

1mA

Noise Figure, NF – dB

2

0

23 2 2357

=1V

V

CE

2V

1.0 10

Collector Current, IC–mA

5

4

2

7

IT00315

0

Collector-to-Emitter Voltage,VCE–V

NF

IC=1mA

3mA

76543210

IT00316

No.6218–2/4