SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Composite Transistor
Low-Frequency General-Purpose Amp,
Driver Applications
Ordering number:EN3964
FC149
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mounting efficiency greatly.
· The FC149 is formed with two chips, being equivalent to the 2SA1813, placed in one package.
· Adoption of FBET process.
· High DC current gain (hFE=500 to 1200).
· High V
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
EBO
(V
EBO
Package Dimensions
unit:mm
2067A
[FC149]
≥15V).
1:Emitter 1
2:Base 1
3:Collector 2
4:Emitter 2
5:Base 2
6:Collector 1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
oitaRniaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
Note:The specifications shown above are for each individual transistor.
Marking:149
OBC
OEC
OBE
C
PC
B
C
T
OBC
OBE
EF
EF
)egral
T
tinu1 002Wm
V
V
V
/llams(
V
V
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,V02–=
BC
BE
EC
EC
EC
BC
0=1.0–Aµ
E
I,V01–=
0=1.0–Aµ
E
I,V5–=
Am1–=0050080021
C
I,V5–=
Am1–=7.089.0
C
I,V01–=
Am01=012zHM
C
zHM1=f,V01–=6.2Fp
I,Am05–=
Am1–=51.0–3.0–V
B
I,Am05–=
Am1–=87.0–1.1–V
B
I,Aµ01–=
0=03–V
E
R,Am1–=
=∞ 52–V
EB
I,Aµ01–=
=0 51–V
C
SANYO:CP6
sgnitaR
nimpytxam
03–V
52–V
51–V
051–Am
003–Am
03–Am
003Wm
˚C
˚C
tinU
52098HA (KT)/53094TH (KOTO) 8-7599 No.3964-1/3