SANYO FC149 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Composite Transistor
Low-Frequency General-Purpose Amp,
Driver Applications
Ordering number:EN3964
Features
· Composite type with 2 transistors contained in the CP package currently in use, improving the mount­ing efficiency greatly.
· The FC149 is formed with two chips, being equiva­lent to the 2SA1813, placed in one package.
· Adoption of FBET process.
· High DC current gain (hFE=500 to 1200).
· High V
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
EBO
(V
EBO
Package Dimensions
unit:mm
2067A
[FC149]
15V).
1:Emitter 1 2:Base 1 3:Collector 2 4:Emitter 2 5:Base 2 6:Collector 1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
oitaRniaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
Note:The specifications shown above are for each individual transistor. Marking:149
OBC OEC OBE
C
PC
B
C T
OBC
OBE
EF
EF
)egral
T
tinu1 002Wm
V V V
/llams(
V
V
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,V02–=
BC BE EC EC
EC BC
0=1.0–Aµ
E
I,V01–=
0=1.0–Aµ
E
I,V5–=
Am1–=0050080021
C
I,V5–=
Am1–=7.089.0
C
I,V01–=
Am01=012zHM
C
zHM1=f,V01–=6.2Fp
I,Am05–=
Am1–=51.0–3.0–V
B
I,Am05–=
Am1–=87.0–1.1–V
B
I,Aµ01–=
0=03–V
E
R,Am1–=
= 52–V
EB
I,Aµ01–=
=0 51–V
C
SANYO:CP6
sgnitaR
nimpytxam
03–V 52–V 51–V 051–Am 003–Am 03–Am
003Wm
˚C ˚C
tinU
52098HA (KT)/53094TH (KOTO) 8-7599 No.3964-1/3
FC149
No.3964-2/3
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