SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Composite Transistor
High-Speed Switching Applications
Ordering number:EN3361
FC140
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mounting efficiency greatly.
Package Dimensions
unit:mm
2074
· Small output capacitance, high gain-bandwidth
product.
· The FC140 is formed with two chips, being equivalent to the 2SC4452, placed in one package.
Electrical Connection
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
noitapissiDrewoPlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
oitaRniaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSt
emiTFFO-nruTt
Note:The specifications shown above are for each individual transistor.
Marking:140
OBC
SEC
OEC
OBE
C
PC
B
C
T
OBC
OBE
EF
)egral
T
no
gts
ffo
tinu1 002Wm
V
V
V
/llams(EF
V
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,V02=
BC
BE
EC
EC
BC
0=1.0Aµ
E
I,V3=
0=1.0Aµ
C
I,V1=
Am01=09042
C
Am01=CI,V1=ECV6.089.0
I,V01=
Am01=054057zHM
C
zHM1=f,V5=4.10.4Fp
I,Am01=
Am1=31.052.0V
B
I,Am01=
Am1=08.058.0V
B
I,Aµ01=
0=04V
E
R,Am1=
=∞ 51V
EB
I,Aµ01=
0=5V
C
[FC140]
B1:Base 1
E1:Emitter 1
E2:Emitter 2
C2:Collector 2
B2:Base 2
C1:Collector 1
SANYO:CP6
04V
04V
51V
5V
002Am
005Am
04Am
003Wm
sgnitaR
nimpytxam
.tiucriCtseTdeificepseeS0.8sn
.tiucriCtseTdeificepseeS0.6sn
.tiucriCtseTdeificepseeS21sn
˚C
˚C
tinU
52098HA (KT)/4180MO, TS No.3361-1/3