SANYO FC139 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Composite Transistor
Low-Frequency General-Purpose Amp,
General Driver Applications
Ordering number:EN3324
FC139
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mounting efficiency greatly.
Package Dimensions
unit:mm
2067
· The FC139 is formed with two chips, being equivalent to the 2SC3689, placed in one package.
· Adoption of FBET process.
· High DC current gain (hFE=800 to 3200).
· High V
EBO
(V
EBO
≥15V)
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
oitaRniaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
Note:The specifications shown above are for each individual transistor.
Marking:139
OBC
OEC
OBE
C
PC
B
C
T
OBC
OBE
EF
)egral
T
tinu1 002Wm
V
V
V
V
/llams(EF
V
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,V04=
BC
BE
EC
EC
EC
BC
0=1.0Aµ
E
I,V01=
0=1.0Aµ
C
I,V5=
Am01=00800510023
C
I,V5=
Am01=8.089.0
C
I,V01=
Am01=002zHM
C
zHM1=f,V01=5.1Fp
I,Am05=
Am1=1.05.0V
B
I,Am05=
Am1=8.01.1V
B
I,Aµ01=
0=06V
E
R,Am1=
=∞ 05V
EB
I,Aµ01=
=0 51V
C
[FC139]
E1:Emitter 1
B1:Base 1
C2:Collector 2
E2:Emitter 2
B2:Base 2
C1:Collector 1
SANYO:CP6
sgnitaR
nimpytxam
06V
05V
51V
001Am
002Am
02Am
003Wm
˚C
˚C
tinU
52098HA (KT)/2080MO, TS No.3324-1/3
FC139
No.3324-2/3
Loading...