SANYO FC13 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amp,
Differential Amp, Analog Switch Applications
Ordering number:EN4336
FC13
Features
· Composite type with 2 FETs contained in the CP
package currently in use, improving the mounting
efficiency greatly.
· The FC13 is formed with two chips, being equivalent
to the 2SK303, placed in one package.
· Excellent in thermal equilibrium and pair capability
and especially suited for differential amp.
Electrical Connection
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVniarD-ot-etaGV
tnerruCetaGI
tnerruCniarDI
noitapissiDrewoPelbawollA
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
XSD
SDG
G
D
P
D
T
Package Dimensions
unit:mm
2095A
[FC13]
1:Source1
2:Drain1
3:Gate2
4:Source2
5:Drain2
6:Gate1
SANYO:CP6
03V
03–V
01Am
01Am
tinu1 002Wm
003Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBD-GV
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
porDegatloVS-G
tnerruCniarDI
oitaRtnerruCniarDV
ecnattimdArefsnarTdrawroFY|sf|VSDV,V01=
oitaRecnattimdArefsnarTdrawroFV
ecnaticapaCtupnIssiCVSDV,V01=
ecnaticapaCrefsnarTesreveRssrCVSDV,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR
∆V
I
DGD)RB(
G
V
SSG
V
)ffo(SG
V
SG
V
SSD
V
)no(SD
V,Aµ01–=
SD
V,V02–=
SG
SD
SG
SD
SD
SD
SD
SD
I,V01=
D
V,V01=
SG
I,V01=
SSD
SG
Y|,V01=
sf
SG
SG
V,Vm01=
SG
The specifications shown above are for each individual transistor.
Note*:The FC13 is classified by FET1 I
0.3D2.10.6E5.2
as follows :
DSS
0=03–V
0=0.1–An
Aµ1=3.0–9.0–5.2–V
V,)egral/llams(
0=*2.1*0.6Am
0=052
I,V01=
SD
zHk1=f,0=0.30.5Sm
zHM1=f,0=0.5Fp
zHM1=f,0=9.0Fp
Am1=05Vm
D
)egral/llams(9.0
)egral/llams(|9.0
Marking:13
I
rank:D,E
DSS
52098HA (KT)/53094TH (KOYO) X-7245 No.4336-1/3
nimpytxam
sgnitaR
tinU
Ω
FC13
No.4336-2/3
Loading...