SANYO FC118 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Composite Transistor
Low-Frequency
General-Purpose Amp Applications
Ordering number:EN3116
FC118
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mounting efficiency greatly.
Package Dimensions
unit:mm
2067
· The FC118 is formed with two chips, being equivalent to the 2SC4577, placed in one package.
· Low collector to emitter saturation voltage.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
noitapissiDrewoPlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
oitaRniaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-C
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
Note: The specifications shown above are for each individual transistor.
Marking:110
OBC
OEC
OBE
C
PC
B
C
T
OBC
OBE
hEF)1(VECI,V2=
hEF)2(VECI,V2=
/llams(
EF
)egral
T
V
1ICI.Am5=
)tas(EC
V
2I
)tas(EC
)tas(EB
OBC)RB(
OEC)RB(
OBE)RB(
tinu1 002Wm
V
V
V
V
C
I
C
I
C
I
C
I
E
I,V51=
BC
BE
EC
EC
EC
0=1.0Aµ
E
I,V4=
0=1.0Aµ
C
Am01=061065
C
Am004=08
C
I,V2=
Am01=8.089.0
C
I,V2=
Am05=003zHM
C
zHM1=f,V01=4Fp
Am5.0=5103Vm
B
I.Am002=
Am01=061003Vm
B
I.Am002=
Am01=59.02.1V
B
I,Aµ01=
0=02V
E
R,Am1=
=∞ 51V
EB
I,Aµ01=
0=5V
C
[FC118]
E1:Emitter1
B1:Base1
C2:Collerctor2
E2:Emitter2
B2:Base2
C1:Collector1
SANYO:CP6
sgnitaR
nimpytxam
02V
51V
5V
005Am
1A
001Am
003Wm
˚C
˚C
tinU
52098HA (KT)/5129MO, TS No.3116-1/3
FC118
No.3116-2/3
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