Sanyo ECH8603 Specifications
Ordering number : ENN7218
Preliminary
ECH8603
P-Channel Silicon MOSFET
ECH8603
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
2.5V drive.
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Total Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
T
Package Dimensions
unit : mm
2206
[ECH8603]
Bottom View
0.3
0.25
5678
2.3
2.8
43 21
0.25
PW≤10µs, duty cycle≤1% --40 A
Mounted on a ceramic board (900mm2✕0.8mm)1unit
Mounted on a ceramic board (900mm2✕0.8mm)
0.65
2.9
Side View
0.07
0.9
Side View
0.15
Top View
8765
1234
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
--20 V
±10 V
--4 A
1.3 W
1.5 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Marking : JC Continued on next page.
(BR)DSSID
DSS
GSS
=--1mA, VGS=0 --20 V
VDS=--20V, VGS=0 --1 µA
VGS=±8V, VDS=0 ±10 µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72602 TS IM TA-3570
No.7218-1/4
ECH8603
Continued from preceding page.
Parameter Symbol Conditions
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.3 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 800 pF
Output Capacitance Coss VDS=--10V, f=1MHz 210 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 160 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 17 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 88 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4A 21 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4A 1.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4A 3.2 nC
Diode Forward Voltage V
yfs
RDS(on)1 ID=--2A, VGS=--4.5V 37 54 mΩ
RDS(on)2 ID=--1A, VGS=--2.5V 58 87 mΩ
SD
VDS=--10V, ID=--2A 4.9 7 S
See specified Test Circuit. 197 ns
r
See specified Test Circuit. 128 ns
f
IS=--4A, VGS=0 --0.82 --1.2 V
Switching Time Test Circuit Electrical Connection
Ratings
min typ max
Unit
0V
--4.5V
P.G
V
IN
PW=10µs
D.C .≤1%
VDD= --10V
8765
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
D
ID= --4A
RL=2.5Ω
V
OUT
V
IN
6 : Drain2
G
50Ω
S
ECH8603
1234
7 : Drain1
8 : Drain1
(Top view)
--5.0
--4.5
--4.0
--3.5
-- A
D
--3.0
--2.5
--2.0
--1.5
Drain Current, I
--1.0
--0.5
--3.0V
--3.5V
4.0V
--
0
0
I
-- V
D
--2.5V
DS
--1.5V
--2.0V
--0.2
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9 0 --0.4 --0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
Drain-to-Source V oltage, V
DS
I
-- V
--10
VDS= --10V
--9
--8
--7
-- A
D
--6
--5
--4
--3
Drain Current, I
= --1.0V
V
GS
-- V
IT04367 IT04368
--2
--1
0
Gate-to-Source V oltage, V
D
GS
Ta=75°C
GS
--25°C
25°C
-- V
No.7218-2/4
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