Sanyo EC4A01C Specifications

Ordering number : ENN6613

2

1

3

4

0.5

0.2 0.2

0.3

0.6

0.3

0.05

0.05

0.05

0.8

0.05

1.0

0.6

(Bottom view)

1 : Base
2 : Emitter
3 : Collector
4 : Collector

SANYO : E-CSP1008-4

EC4A01C

N-Channel Silicon Junction FET

EC4A01C

Capacitor Microphone Applications

Features

• Ultrasmall (1008 size), thin (0.6mm) leadless package.

•

Especially suited for use in audio, telephone capacitor
microphones.

• Excellent voltage characteristics.

• Excellent transient characteristics.

• Adoption of FBET process.

Package Dimensions

unit : mm

2184

[EC4A01C]

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Gate-to-Drain Voltage V
Gate Current I
Drain Current I
Allowable Power Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

GDO

G
D

D

--20 V
10 mA

1mA

100 mW

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Gate-to-Drain Breakdown Voltage V
Cutoff Voltage VGS(off) VDS=5V, ID=1µA --0.2 --0.6 --1.2 V
Drain Current I
Forward Transfer Admittance
Input Capacitance Ciss VDS=5V, VGS=0, f=1MHz 3.5 pF
Reverse Transfer Capacitance Crss VDS=5V, VGS=0, f=1MHz 0.65 pF

(BR)GDOIG

DSS

yfs





=--100µA --20 V

VDS=5V, VGS=0 150 380 µA
VDS=5V, VGS=0, f=1kHz 0.5 1.2 mS

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max

Continued on next page.

13001 TS IM TA-3161

Unit

No.6613-1/5

EC4A01C

Continued from preceding page.

[Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See Specified Test Circuit]

Parameter Symbol Conditions

Voltage Gain G
Reduced Voltage Characteristics ∆G
Frequency Characteristics ∆Gvf f=1kHz to 110kHz --1.0 dB
Input Impedance Z
Output Impedance Z
Total Harmonic Distortion THD f=1kHz, VIN=30mV 1.2 %
Output Noise Voltage V

f=1kHz, VIN=10mV --3.0 dB

V

f=1kHz, VIN=10mV, VCC=4.5→1.5V --1.2 --3.5 dB

VV

f=1kHz 25 MΩ

IN

f=1kHz 1000 Ω

O

VIN=0, A Curve --110 dB

NO

Ratings

min typ max

Type No. Indication (Top view) Electrical Connection (Top view)

Polarity mark (On the top)

V

Drain

Gate

Source

*Electrodes : On the bottom

Polarity mark

Gate

Drain

Source

Unit

Switching Time Test Circuit

Voltage Gain
Frequency Characteristics
Distortion
Reduced Voltage Characteristics

15pF

~

OSC

ID -- V

-- µA

D

500

400

300

1kΩ

33µF

+

VTVM

DS

VCC=4.5V
VCC=1.5V

THD

=0

BA

1kΩ

Output Impedance

500

400

-- µA

300

D

ID -- V

DS

=0

V

GS

V

V

GS

200

Drain Current, I

100

0

01 8910234567

Drain-to-Source V oltage, V

--0.1V

--0.2V

--0.3V

--0.4V

DS

-- V

--0.5V

IT02310

200

Drain Current, I

100

--0.1V

--0.2V

--0.3V

-- V

--0.5V

IT03015

0

012345

Drain-to-Source V oltage, V

--0.4V

DS

No.6613-2/5