Sanyo EC4403C Specifications
Ordering number : ENN7038
EC4403C
N-Channel Silicon MOSFET
EC4403C
Small Signal Switch, Interface Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2197
[EC4403C]
0.5
0.2 0.2
0.05
3
2
0.05
(Bottom view)
4
1
0.3
0.3
0.05
0.05
0.6
1.0
1 : Gate
2 : Source
3 : Drain
0.6
4 : Drain
0.8
Specifications
SANYO : E-CSP1008-4
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 0.4 A
50 V
±20 V
0.1 A
0.15 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=100µA 1 2.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=50mA, VGS=10V 5.8 7.5 Ω
RDS(on)2 ID=30mA, VGS=4V 7.5 10.5 Ω
=1mA, VGS=0 50 V
VDS=50V, VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=10V, ID=50mA 85 120 mS
min typ max
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
GI IM
81001 TS IM TA-3334
No.7038-1/4
Unit
EC4403C
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=10V, f=1MHz 6.2 pF
Output Capacitance Coss VDS=10V, f=1MHz 4.4 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 1.5 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 105 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=100mA 1.40 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=100mA 0.21 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=100mA 0.34 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 11 ns
r
See specified Test Circuit. 75 ns
f
IS=100mA, VGS=0 0.9 1.2 V
min typ max
Type No. Indication(Top view) Electrical Connection(Top view) Switching Time Test Circuit
Ratings
Unit
Y
0.10
0.08
-- A
D
0.06
0.04
Drain Current, I
0.02
0
0
12
11
10
(on) -- Ω
9
DS
8
7
6
Static Drain-to-Source
On-State Resistance, R
012344556
0.2 0.4 0.6 0.8 1.0
Drain-to-Source V oltage, VDS -- V
RDS(on) -- V
ID=30mA
Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A
I
D
10.0V
50mA
-- V
8.0V
Gate
Source
Gate
DS
6.0V
4.0V
VGS=2.0V
GS
78910
Polarity mark (Top)
*Electrodes : on the bottom
Drain
V
10V
0V
PW=10µs
D.C.≤1%
IN
V
IN
VDD=25V
D
G
Polarity mark (Top)
Drain
P.G
50Ω
S
Source
I
-- V
0.20
0.18
3.0V
2.5V
IT00042
Ta=25°C
IT00044 IT00045
0.16
0.14
-- A
D
0.12
0.10
0.08
0.06
Drain Current, I
0.04
0.02
0
012345
Gate-to-Source V oltage, VGS -- V
100
7
5
3
(on) -- Ω
2
DS
10
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
1.0
0.01 0.1
23 57 23
D
25°C
RDS(on) -- I
Ta=75°C
--25°C
Ta=75°C
25°C
--25°C
GS
Ta= --25°C
VDS=10V
25°C
°C
75
D
VGS=10V
No.7038-2/4
ID=50mA
RL=500Ω
EC4403C
IT00043
V
OUT
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