Ordering number : ENN7036
EC4303C
P-Channel Silicon MOSFET
EC4303C
Small Signal Switch, Interface Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2197
[EC4303C]
0.5
0.2 0.2
0.05
3
2
0.05
(Bottom view)
4
1
0.3
0.3
0.05
0.05
0.6
1.0
1 : Gate
2 : Source
3 : Drain
0.6
4 : Drain
0.8
Specifications
SANYO : E-CSP1008-4
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --0.28 A
--50 V
±20 V
--0.07 A
0.15 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --1 --2.5 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--40mA, VGS=--10V 17 22 Ω
RDS(on)2 ID=--20mA, VGS=--4V 23 32 Ω
=--1mA, VGS=0 --50 V
VDS=--50V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--40mA 50 70 mS
min typ max
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
GI IM
82201 TS IM TA-3333
No.7036-1/4
Unit
EC4303C
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 6.2 pF
Output Capacitance Coss VDS=--10V, f=1MHz 4.0 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.3 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 100 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--70mA 1.32 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--70mA 0.17 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--70mA 0.34 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 10 ns
r
See specified Test Circuit. 150 ns
f
IS=--70mA, VGS=0 --0.85 --1.2 V
min typ max
Type No. Indication(Top view) Electrical Connection(Top view) Switching Time Test Circuit
Ratings
Unit
--0.07
--0.06
--0.05
-- A
D
--0.04
--0.03
--0.02
Drain Current, I
G
VDD= --25V
ID= --40mA
RL=625Ω
D
V
OUT
Polarity mark (Top)
V
X
Gate
Drain
Source
*Electrodes : on the bottom
0V
--10V
PW=10µs
D.C.≤1%
IN
V
IN
Polarity mark (Top)
Drain
P.G
50Ω
S
EC4303C
Gate
Source
I
D
--8.0V
--10.0V
-- V
DS
--6.0V
--4.0V
-- A
D
--0.14
--0.12
--0.10
--0.08
--0.06
I
D
-- V
GS
Ta= --25°C
°C
75
VDS= --10V
25°C
--3.0V
--0.04
Drain Current, I
--0.01
0
0
50
--0.4
(on) -- Ω
DS
25
ID= --20mA
20
15
Static Drain-to-Source
On-State Resistance, R
10
--230--335--440--545--6
VGS= --2.5V
Drain-to-Source V oltage, VDS -- V
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
RDS(on) -- V
GS
--0.02
0
IT00103 IT00104
Ta=25
°C
100
7
5
(on) -- Ω
--1
0
Gate-to-Source V oltage, VGS -- V
Ta=75°C
25°C
--25°C
--2
RDS(on) -- I
D
DS
3
--40mA
2
Static Drain-to-Source
On-State Resistance, R
Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A
--7 --8 --9 --10
IT00105
10
--0.01
23 57 23
Ta=75°C
25°C
--25°C
--4--3 --5 --6
VGS= --10V
--0.1
IT00106
No.7036-2/4