SANYO EC3H06B Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
UHF to S Band Low-Noise Amplifier
and OSC Applications
Ordering number:ENN6524
EC3H06B
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low noise : NF=0.9dB typ (f=1GHz).
· High gain : S21e2=10dB typ (f=1.5GHz).
· High cutoff frequency : fT=11GHz typ.
· Low voltage, low current operation.
(VCE=1V, IC=1mA)
· Ultrasmall (1006size), slim (0.5mm) leadless package.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
Package Dimensions
unit:mm
: NF=1.4dB typ (f=1.5GHz).
: fT=7GHz typ.
: S21e2=5.5dB typ (f=1.5GHz).
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
niaGrefsnarTdrawroF
erugiFesioN
OBC
OEC
OBE
C
C
V
OBC
V
OBE
h
V
EF
fT1VECI,V5=
fT2VECI,V1=
2
V
|e12S|
1
2
V
|e12S|
2
1FNVECI,V5=
2FNVECI,V2=
BC
BE
EC
BC
BC
EC
EC
2183
[EC3H06B]
0.35
0.2
1
3
0.5
(Bottom view)
0.6
0.15
2
0.05
0.05
0.5
0.15
0.05
0.25
0.4
0.65
0.25
0.05
I,V01=
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am01=
C
Am01=
C
Am1=
C
zHM1=f,V01=
zHM1=f,V01=
I,V5=
C
I,V1=
C
C
C
zHG5.1=f,Am01=
zHG5.1=f,Am1=
zHG5.1=f,Am5=4.10.3Bd
zHG1=f,Am3=9.0Bd
1.0
1 : Base
2 : Emitter
3 : Collector
SANYO : E-CSP1006-3
02V
01V
5.1V
03Am
001Wm
sgnitaR
nimpytxam
001081
811zHG
7zHG
54.07.0Fp
03.0Fp
801Bd
5.5Bd
˚C
˚C
tinU
92500TS (KOTO) TA-2482 No.6524–1/5
EC3H06B
Type No. Indication (Top view) Electrical Connection (Top view)
Polarity mark (Top)
F
Base
Collector
Emitter
* Electrodes : on the bottom
Polarity mark (Top)
Collector
Base
Emitter
5
3
2
hFE -- I
FE
100
7
5
3
2
DC Current Gain, h
10
7
5
5
3
2
3257 3257 3257
1.00.1
Collector Current, IC–mA
Cob -- V
C
VCE=5V
10 100
CB
IT01377
f=1MHz
– GHz
T
Gain-Bandwidth Product, f
3
2
10
7
5
3
2
1.0
7
5
Collector Current, IC–mA
5
3
2
f
-- I
T
=5V
V
CE
1.00.1
Cre -- V
1V
C
CB
f=1GHz
10
523 57 23 2357
IT01378
f=1MHz
Output Capacitance, Cob – pF
2
1.0
0.1
–dB
Forward Transfer Gain, S21e
7
5
3
2
7
5
16
14
12
10
8
6
4
2
0
33255732577
1.0
7
5
3
2
0.1
Reverse Transfer Capacitance, Cre – pF
7
2
–dB
Forward Transfer Gain, S21e
16
14
12
10
5
8
6
4
2
0
33255732577
325
7325 32577
Collector-to-Base Voltage, VCB- - V Collector-to-Base Voltage, VCB-- V
1.0
S21e
2
-- I
100.1
IT01379
C
f=1.5GHz f=1GHz
V
CE
=5V
2V
1V
1.0
Collector Current, IC–mA
10 100
IT01381
325
73257 5327
1.0
2
S21e
-- I
C
1V
1.0
Collector Current, IC–mA
10 100
2V
V
CE
100.1
=5V
IT01380
IT01382
No.6524–2/5
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