SANYO EC3H05B Datasheet

Ordering number : ENN6574

EC3H05B

NPN Epitaxial Planar Type Silicon Transistor

EC3H05B

VHF to UHF Wide-Band Low-Noise

Amplifier Applications

Features

•

Low noise : NF=1.2dB typ (f=1GHz).

• High gain : S21e

• Hige cutoff frequency : f

• Ultraminiature (1006 size) and thin (0.5mm)

leadless package.

2

=13dB typ (f=1GHz).

=9.0GHz typ.

T

Package Dimensions

unit : mm

2183

0.25

0.65

0.25

0.35

0.2

0.15

0.05

1

0.4

0.05

0.5

(Bottom View)

3

[EC3H05B]

0.15

2

0.05

0.05

1.0

1 : Base
2 : Emitter

0.5

0.6

3 : Collector
SANYO : E-CSP1006-3

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

C

16 V

8V

1.5 V
50 mA

100 mW

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Output Capacitance Cob VCB=10V , f=1MHz 0.55 1.2 pF
Forward Transfer Gain
Noise Figure NF VCE=5V, IC=5mA, f=1GHz 1.2 2.5 dB



CBO
EBO

FE

S21e

VCB=10V, IE=0 1.0 µA
VEB=1V, IC=0 10 µA
VCE=5V, IC=15mA 100 180
VCE=5V, IC=15mA 9.0 GHz

T

2

VCE=5V, IC=15mA, f=1GHz 10 13 dB



Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71400 TS IM TA-2477

No.6574-1/5

Unit

EC3H05B

Type No. Indication (Top view) Electrical Connection (Top view)

Polarity mark (Top)

E

This product adopts a
high-frequency process.
Please be careful when
handling it beause it is
susceptible to static
electricity.

3

2

100

FE

7
5

3
2

DC Current Gain, h

10

7
5

5

3

2

1.0

Collector Current, IC -- mA

hFE -- I

Cob -- V

Base

Emitter

Base

C

VCE=5V

10 100

32573257357

IT01370

CB

f=1MHz

Polarity mark (Top)

Emitter

Collector

*Electrodes : on the bottom

Collector

2

10

-- GHz

7

T

5

3

2

1.0

Gain-Bandwidth Product, f

7
5

7235723 57

1.0

5

3

2

f

-- I

T

C

10

Collector Current, IC -- mA

Cre -- V

CB

VCE=5V

IT01371

f=1MHz

-- dB

2

Output Capacitance, Cob -- pF

Forward Transfer Gain, S21e

1.0
7
5

3

2

0.1

16

VCE=5V

f=1GHz

14

12

10

8

6

4

2

0

53257 32577

325

73257 327

Collector-to-Base Voltage, V

1.0

S21e2 -- I

1.0

Collector Current, IC -- mA

1.0
7
5

3

2

Reverse Transfer Capacitance, Cre -- pF

CB --

C

100.1

V

IT01372

0.1

10

325

73257 327

1.0

Collector-to-Base Voltage, V

NF -- I

C

CB --

100.1

V

IT01373

VCE=5V
f=1GHz

8

dB

--

6

4

Noise Figure, NF

2

0

10

IT01374

1.0

3232

57 57

Collector Current, IC -- mA

10

IT01375

No.6574-2/5