SANYO EC3H04C Datasheet

Ordering number : ENN6580

EC3H04C

NPN Epitaxial Planar Silicon Transistor

EC3H04C

High-Frequency Low-Noise Amplifier

and OSC Applications

Features

•

Low noise : NF=1.7dB typ (f=2GHz).

• Hige cut-off frequency : f

• Low operating voltage.

• Ultraminiature (1008 size) and thin (0.6mm) leadless

package.

=8GHz typ (VCE=1V).

T

Package Dimensions

unit : mm

2184

[EC3H04C]

0.5

0.2 0.2

0.05

3

2

0.05

(Bottom View)

0.3

4

0.6

1

0.3

0.05

0.05

1.0

1 : Base
2 : Emitter
3 : Collector
4 : Collector

SANYO : E-CSP1008-4

Specifications

0.6

0.8

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage Temperature T stg --55 to +150 °C

CBO
CEO
EBO

C

C

9V
6V

2V
100 mA
100 mW

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=1V, f=1MHz 1.1 1.5 pF
Reverse Transfer Capacitance Cre VCB=1V, f=1MHz 0.85 pF

Forward Transfer Gain
Noise Figure NF VCE=1V, IC=10mA, f=2GHz 1.7 2.5 dB

S21e



S21e



CBO
EBO

FE

VCB=5V, IE=0 1.0 µA
VEB=1V, IC=0 10 µA
VCE=1V, IC=10mA 100 180
VCE=1V, IC=10mA 6 8 GHz

T

2

1VCE=1V, IC=10mA, f=2GHz 4 5 dB



2

2VCE=3V, IC=20mA, f=1GHz 12 dB



Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72100 TS IM TA-2738

No.6580-1/6

Unit

EC3H04C

Type No. Indication (Top view) Electrical Connection (Top view)

Polarity mark (Top)

D

This product adopts a
high-frequency process.
Please be careful when
handling it beause it is
susceptible to static
electricity.

50

40

-- mA
C

30

20

Collector Current, I

10

0

0

3

2

FE

100

7

DC Current Gain, h

5

3

3

10

7
5

3
2

1

Collector-to-Emitter Voltage, VCE -- V

7

5

1.0

I

C -- VCE

0.35mA

0.30mA

0.25mA

0.20mA

0.15mA

32

h

FE -- IC

=3V

V

CE

1V

3

2

7

5

10 100

3

2

Collector Current, IC -- mA

Cob -- V

CB

0.10mA

0.05mA

4

7

5

IB=0

IT02230

IT02232

f=1MHz

Base

Emitter

Base

5

3

2

Emitter

Collector

Collector

*Electrodes : on the bottom

Polarity mark (Top)

Collector

100

90

80

70

-- mA
C

60

50

40

30

Collector Current, I

20

10

0

0

0.2 0.4 0.6 0.8 1.0 1.20.1 0.3 0.5 0.7 0.9 1.1

Base-to-Emitter V oltage, VBE -- V

100

7
5

3

-- GHz
T

2

10

7
5

3
2

Gain-Bandwidth Product, f

1.0

1.0

10

7
5

3
2

2

Collector

I

C -- VBE

fT -- I

C

=3V

V

CE

1V

57

3

2357

10

Collector Current, IC -- mA

Cre -- V

CB

=3V
CE

V

1V

IT02231

100

IT02233

f=1MHz

Output Capacitance, Cob -- pF

1.0

0.1

1.0
7
5

3
2

7
5

3
2

Reverse Transfer Capacitance, Cre -- pF

0.1

2

5

3

7

1.0

Collector-to-Base Voltage, V

2

CB --

5

3

7

10

IT02234

V

0.1

0.1

2 3 57 2 3 57

Collector-to-Base Voltage, V

1.0

CB --

IT02235

V

10

No.6580-2/6