SANYO EC3H03B Datasheet
Ordering number : ENN6576
EC3H03B
NPN Epitaxial Planar Type Silicon Transistor
EC3H03B
VHF to UHF Wide-Band Low-Noise Amplifier
and OSC Applications
Features
•
Low noise : NF=1.1dB typ (f=1GHz).
• High gain : S21e
• High cut-off frequency : f
• Ultraminiature (1006 size) and thin (0.5mm)
leadless package.
2
=12dB typ (f=1GHz).
=7.5GHz typ.
T
Package Dimensions
unit : mm
2183
0.35
[EC3H03B]
0.2
3
0.5
0.15
2
0.05
0.05
0.25
0.65
0.25
0.15
0.05
1
0.4
0.05
(Bottom View)
1.0
1 : Base
2 : Emitter
3 : Collector
SANYO : E-CSP1006-3
Specifications
0.5
0.6
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
C
20 V
12 V
2V
100 mA
100 mW
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Output Capacitance Cob VCB=10V, f=1MHz 0.9 1.4 pF
Reverse Transfer Capacitance Cre VCB=10V, f=1MHz 0.65 pF
Forward Transfer Gain
Noise Figure NF VCE=5V, IC=7mA, f=1GHz 1.1 2.0 dB
CBO
EBO
S21e
VCB=10V, IE=0 1.0 µA
VEB=1V, IC=0 10 µA
VCE=5V, IC=30mA 100 180
FE
VCE=5V, IC=30mA 6 7.5 GHz
T
2
VCE=5V, IC=30mA, f=1GHz 10 12 dB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71400 TS IM TA-2479
No.6576-1/5
Unit
EC3H03B
Type No. Indication (Top view) Electrical Connection (Top view)
Polarity mark (Top)
C
This product adopts a
high-frequency process.
Please be careful when
handling it beause it is
susceptible to static
electricity.
50
40
-- mA
C
30
20
Collector Current, I
10
FE
0
0
7
5
3
2
2
Collector-to-Emitter Voltage, VCE -- V
I
C -- VCE
0.35mA
h
FE -- IC
64
VCE=5V
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
8
Emitter
0.05mA
IB=0
IT01418
Base
Base
10
Polarity mark (Top)
Emitter
Collector
*Electrodes : on the bottom
Collector
100
80
-- mA
C
60
40
Collector Current, I
20
0
0.2
0
Base-to-Emitter V oltage, VBE -- V
10
7
-- GHz
5
T
I
C -- VBE
0.4
fT -- I
=5V
CE
V
2V
0.6
0.8
1.0
1.2
IT01419
C
=5V
CE
V
2V
100
7
5
DC Current Gain, h
3
2
10
3
7
5
1.0
10
7
5
3
2
1.0
7
5
3
Output Capacitance, Cob -- pF
2
0.1
0.1
2
3
Collector-to-Base Voltage, V
3
2
Collector Current, IC -- mA
7
5
10
Cob -- V
5
7
1.0
3
2
CB
2
5
3
CB --
2V
5
7
7
100
10
V
2
IT01420
f=1MHz
2
IT01422
3
2
Gain-Bandwidth Product, f
3
1.0
10
7
5
3
2
1.0
7
5
3
2
1.0
2
57
3
10
Collector Current, IC -- mA
Cre -- V
2357
CB
100
IT01421
f=1MHz
Reverse Transfer Capacitance, Cre -- pF
3
0.1
0.1
7
5
2
3
1.0
2
Collector-to-Base Voltage, V
5
3
7
10
V
CB --
2
IT01423
3
No.6576-2/5
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