SANYO EC3H02C Datasheet

Ordering number : ENN6579

EC3H02C

NPN Epitaxial Planar Silicon Transistor

EC3H02C

VHF to UHF Wide-Band Low-Noise

Amplifier Applications

Features

•

Low noise : NF=1.0dB typ (f=1GHz).

• High gain :S21e

• High cutoff frequency : f

• Ultraminiature (1008 size) and thin (0.6mm)

leadless package .

2

=12dB typ (f=1GHz).

=7GHz typ.

T

Package Dimensions

unit : mm

2184

[EC3H02C]

0.5

0.2 0.2

0.05

3

2

0.05

(Bottom View)

0.3

4

0.6

1

0.3

0.05

0.05

1.0

1 : Base
2 : Emitter

0.6

0.8

3 : Collector
4 : Collector

SANYO : E-CSP1008-4

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

C

20 V
10 V

2V

70 mA

100 mW

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwitch Product f
Output Capacitance Cob VCB=10V , f=1MHz 0.7 1.2 pF
Reverse Transfer Capacitance Cre VCB=10V , f=1MHz 0.45 pF

Forward Transfer Gain
Noise Figure NF VCE=5V, IC=7mA, f=1GHz 1.0 1.8 dB




CBO
EBO

FE

S21e
S21e

VCB=10V, IE=0 1.0 µA
VEB=1V, IC=0 10 µA
VCE=5V, IC=20mA 100 180
VCE=5V, IC=20mA 5 7 GHz

T

2

1VCE=5V, IC=20mA, f=1GHz 9 12 dB



2

2VCE=2V, IC=3mA, f=1GHz 8.5 dB



Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71400 TS IM TA-2739

No.6579-1/5

Unit

EC3H02C

Type No. Indication (Top view) Electrical Connection (Top view)

Polarity mark (Top)

B

This product adopts a
high-frequency process.
Please be careful when
handling it beause it is
susceptible to static
electricity.

3

2

100

FE

7
5

3
2

DC Current Gain, h

10

7
5

3

2

1.0

hFE -- I

32

C

57 32257357

10 100

Collector Current, IC -- mA

Cob -- V

CB

Base

Emitter

Base

VCE=5V

IT01363

f=1MHz

Polarity mark (Top)

Emitter

Collector

*Electrodes : on the bottom

Collector

2

10

-- GHz

7

T

5

3

2

1.0

Gain-Bandwidth Product, f

7
5

7223 5723 57

1.0

Collector Current, IC -- mA

3

2

f

-- I

T

C

10 100

Cre -- V

CB

VCE=5V

IT01364

f=1MHz

1.0
7
5

3
2

Output Capacitance, Cob -- pF

0.1
7

5

325

Collector-to-Base Voltage, V

14

12

-- dB

2

10

8

6

4

2

Forward Transfer Gain, S21e

0

33257

CE

V

1.0

Collector Current, IC -- mA

73257 327

1.0

S21e2 -- I

=5V

2V

10

100.1

V

CB --

IT01365

C

f=1GHz

325757 2

100

IT01367

1.0
7
5

3
2

0.1
7

Reverse Transfer Capacitance, Cre -- pF

5

12

10

dB

8

--

6

4

Noise Figure, NF

2

0

325

73257 327

Collector-to-Base Voltage, V

1.0

1.0

NF -- I

32

57 32257357

C

10 100

Collector Current, IC -- mA

CB --

100.1

V

IT01366

VCE=5V
f=1GHz

IT01368

No.6579-2/5