SANYO EC3H02B Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Low-Noise Wide-Band
Amplifier Applications
Ordering number:ENN6523
EC3H02B
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low noise : NF=1.0dB typ (f=1GHz).
· High gain : S21e2=12dB typ (f=1GHz).
· High cutoff frequency : fT=7GHz typ.
· Ultrasmall (1006size), slim (0.5mm) leadless package.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2183
[EC3H02B]
0.35
0.2
1
3
0.5
(Bottom view)
0.6
0.15
2
0.05
0.05
1 : Base
0.5
2 : Emitter
3 : Collector
SANYO : E-CSP1006-3
0.15
0.05
0.25
0.4
0.65
0.25
0.05
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
C
1.0
02V
01V
2V
07Am
001Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
niaGrefsnarTdrawroF
erugiFesioN
h
V
OBC
V
OBE
V
EF
f
V
T
2
V
|e12S|
1
2
V
2
|e12S|
FNVECI,V5=
I,V01=
BC
BE
EC
EC
BC
BC
EC
EC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am02=
C
I,V5=
Am02=
C
zHM1=f,V01=
zHM1=f,V01=
I,V5=
C
I,V2=
C
C
zHG1=f,Am02=
zHG1=f,Am3=
zHG1=f,Am7=0.18.1Bd
92500TS (KOTO) TA-2480 No.6523–1/5
sgnitaR
nimpytxam
001081
57 zHG
7.02.1Fp
54.0Fp
921Bd
5.8Bd
tinU
EC3H02B
Type No. Indication (Top view) Electrical Connection (Top view)
Polarity mark (Top)
B
Base
Collector
Emitter
* Electrodes : on the bottom
Polarity mark (Top)
Collector
Base
Emitter
3
2
100
FE
7
5
3
2
DC Current Gain, h
10
7
5
3
2
1.0
hFE -- I
32
Collector Current, IC–mA
Cob -- V
C
57 32257357
10 100
CB
VCE=5V
IT01363
f=1MHz
2
10
– GHz
7
T
5
3
2
1.0
Gain-Bandwidth Product, f
7
5
7223 5723 57
1.0
3
2
f
-- I
T
C
Collector Current, IC–mA
10 100
Cre -- V
CB
VCE=5V
IT01364
f=1MHz
1.0
7
5
3
2
Output Capacitance, Cob – pF
0.1
7
5
325
Collector-to-Base Voltage, VCB- - V Collector-to-Base Voltage, VCB-- V
14
12
–dB
2
10
8
6
4
2
Forward Transfer Gain, S21e
0
33257
S21e
=5V
CE
V
1.0
Collector Current, IC–mA
1.0
7
5
3
2
0.1
7
Reverse Transfer Capacitance, Cre – pF
73257 327
1.0
2
-- I
C
100.1
IT01365
f=1GHz
5
12
325
73257 327
1.0
NF -- I
100.1
IT01366
C
VCE=5V
f=1GHz
10
2V
8
6
4
Noise Figure, NF – dB
2
10
325757 2
100
IT01367
0
1.0
32
57 32257357
Collector Current, IC–mA
10 100
IT01368
No.6523–2/5
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