SANYO EC3H01B Datasheet

Ordering number : ENN6573

EC3H01B

NPN Epitaxial Planar Silicon Transistor

EC3H01B

VHF Band Low-Noise Amplifer

and OSC Applications

Features

•

Low noise : NF=1.8dB typ (f=150MHz).

• High gain : S21e

• Ultraminiature (1006 size) and thin (0.5mm) leadless

package.

2

=16dB typ (f=150MHz).

Package Dimensions

unit : mm

2183

0.25

0.65

0.25

0.35

0.15

0.05

1

0.4

0.05

(Bottom View)

0.2

3

0.5

[EC3H01B]

0.15

2

0.05

0.05

1.0

1 : Base
2 : Emitter

Specifications

0.5

0.6

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage Temperature T stg --55 to +150 °C

CBO
CEO
EBO

C

C

3 : Collector
SANYO : E-CSP1006-3

20 V
12 V

2V

50 mA

100 mW

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I

DC Current Gain

Gain Bandwidth Product
Output Capacitance Cob VCB=10V, f=1MHz 1.1 1.8 pF

Reverse Transfer Capacitance Cre VCB=10V, f=1MHz 0.8 pF
Forward Transfer Gain
Noise Figure NF VCE=2V, IC=3mA, f=150MHz 1.8 3.0 dB

CBO
EBO

hFE1VCE=2V, IC=3mA 100 180
hFE2VCE=2V, IC=50mA 70

fT1VCE=2V, IC=3mA 1.0 1.7 GHz
fT2VCE=2V, IC=20mA 5.0 GHz

S21e



VCB=10V, IE=0 1.0 µA
VEB=1V, IC=0 10 µA

2

VCE=2V, IC=3mA, f=150MHz 13 16 dB



Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72100 TS IM TA-2481

No.6573-1/5

Unit

EC3H01B

Type No. Indication (Top view) Electrical Connection (Top view)

Polarity mark (Top)

A

This product adopts a
high-frequency process.
Please be careful when
handling it beause it is
susceptible to static
electricity.

3

2

FE

100

7

5

3

DC Current Gain, h

2

10

5

3

2

1.0

Collector Current, IC -- mA

h

FE -- IC

23 577

Cob -- V

CB

VCE=2V

10

Base

Collector

Emitter

*Electrodes : on the bottom

Polarity mark (Top)

Collector

Base

Emitter

f

-- I

T

2

10

1V

23 5735

IT01305 IT01306

f=1MHz

7

-- GHz
T

5

3

2

1.0
7
5

Gain-Bandwidth Product, f

3

7

1.0 10

Collector Current, IC -- mA

5

3

2

Cre -- V

C

=2V

CE

V

1V

CB

23 5723 57

f=1MHz

2

Output Capacitance, Cob -- pF

-- dB

Forward Transfer Gain, S21e

1.0

0.1

1.0

7
5

3

2

7
5

3

2

Reverse Transfer Capacitance, Cre -- pF

0.1

7

32

28

24

20

23 57

0.1

Collector-to-Base Voltage, V

S21e2 -- I

1.0

23 2357

CB --

C

10

IT01307 IT01308

V

f=150MHz

7

0.1 1.0

12

10

dB

8

--

Collector-to-Base Voltage, V

NF -- I

23 235723 57

CB --

10

V

C

f=150MHz

=2V

16

12

8

4

0

57

1.0

CE

V

1V

233572357

Collector Current, IC -- mA

10 100

IT01309

6

4

Noise Figure, NF

2

0

7

1.0

V

=2V

CE

1V

2 3 57 2 3 57

Collector Current, IC -- mA

10 100

IT01310

No.6573-2/5