Ordering number : EN5863A
DL-3147-141(-241) |
Red Laser Diode |
DL-3147-141(-241)
Index Guided AlGaInP Laser Diode
Overview
DL-3147-141(-241) is index guided 645 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low threshold current and high operating temperature are achieved by a strained multiple quantum well active layer. DL-3147-141(-241) is suitable for applications such as bar-code scanners, optical disc systems and other optical information systems.
Features
∙ Short wavelength |
: 645 nm (Typ.) |
∙ Low threshold current |
: Ith = 45 mA (Typ.) |
∙High operating temperature : 5 mW at 60°C
∙TE mode
Absolute Maximum Ratings at Tc=25°C
Parameter |
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Symbol |
Ratings |
Unit |
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Light Output |
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Po |
7 |
mW |
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Reverse Voltage |
Laser |
VR |
2 |
V |
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PIN |
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30 |
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Operating Temperature |
Topr |
---10 to +60 |
°C |
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Storage Temperature |
Tstg |
---40 to +85 |
°C |
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Electrical and Optical Characteristics at Tc=25°C
Package Dimensions
0 |
Tolerance : ±0.2 |
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ø5.6 – 0.025 |
Unit |
: mm |
ø4.4
ø3.55 ±0.1
ø1.6
Effective window diameter 1.0min.
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1 |
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3 |
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2 |
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Top view |
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1.0±0.1 |
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0.4±0.1 |
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0.25 |
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LD facet |
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1.27±0.08 |
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1.2±0.1 |
3.5±0.5 |
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0.5max. |
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3–ø0.45 ±0.1 |
±1.06.5 |
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ø1.4max. |
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Pin No. |
1 |
2 |
3 |
ø2.0 |
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5.6mm ø stem
Electrical Connection
1 |
3 |
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1 |
3 |
LD |
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PD |
LD |
PD |
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2 |
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2 |
2 power supply system + power supply system
-141 |
-241 |
Parameter |
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Symbol |
Condition |
Min. |
Typ. |
Max. |
Unit |
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Threshold Current |
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Ith |
CW |
-- |
45 |
65 |
mA |
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Operating Current |
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Iop |
Po=5mW |
--- |
60 |
80 |
mA |
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Operating Voltage |
|
Vop |
Po=5mW |
--- |
2.2 |
2.5 |
V |
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Lasing Wavelength |
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λ p |
Po=5mW |
-- |
645 |
655 |
nm |
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Beam ) |
Perpendicular |
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θ |
Po=5mW |
25 |
30 |
40 |
deg. |
Divergence |
Parallel |
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θ // |
Po=5mW |
6 |
7.5 |
10 |
deg. |
Off Axis |
Perpendicular |
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θ |
-- |
-- |
-- |
±3 |
deg. |
Angle |
Parallel |
|
θ // |
-- |
--- |
--- |
±2 |
deg. |
Differential Efficiency |
|
dPo/dIop |
--- |
0.15 |
0.35 |
-- |
mW/mA |
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Monitoring Output Current |
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Im |
Po=5mW |
0.05 |
0.15 |
-- |
mA |
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Astigmatism |
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As |
Po=5mW |
--- |
8 |
-- |
mm |
|
) Full angle at half maximum |
note : The above product specifications are subject to change without notice. |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2798 GI / N2897 GI, (IM) No.5863 1/3
DL-3147-141(-241)
Characteristics
Output power vs. Forward current
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6 |
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60°C |
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(mW) |
5 |
25°C |
50°C |
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Po |
4 |
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power |
3 |
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Output |
2 |
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1 |
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0 |
100 |
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0 |
150 |
Forward current IF (mA)
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Monitor current vs. Output power |
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0.5 |
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(mA)Im |
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Tc=25°C |
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0.4 |
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Vr(PD)=5V |
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current |
0.3 |
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0.2 |
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Monitor |
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0.1 |
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0 |
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0 |
1 |
2 |
3 |
4 |
5 |
Output power Po (mW)
Lasing wavelength vs. Temperature
(nm)pλ |
655 |
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Po=5mW |
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wavelength |
650 |
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645 |
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Lasing |
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640 |
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0 |
10 |
20 |
30 |
40 |
50 |
60 |
Temperature Tc (°C)
Threshold current vs. Temperature
(mA) |
100 |
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80 |
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Ith |
60 |
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current |
40 |
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Threshold |
20 |
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10 |
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0 |
10 |
20 |
30 |
40 |
50 |
60 |
Temperature Tc (°C)
Beam divergence
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1.0 |
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Po=5mW |
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intensity |
0.8 |
Tc=25°C |
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θ |
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0.6 |
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Relative |
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0.4 |
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θ // |
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0.2 |
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0 -40 -30 -20 -10 0 10 20 30 40
Angle θ (deg.)
Output power vs. Lasing wavelength
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Po=5mW |
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Tc=25°C |
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intensity |
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Po=3mW |
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Relative |
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Po=1mW |
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639 |
641 |
643 |
645 |
647 |
649 |
Lasing wavelength λp (nm)
No.5863 2/3