Sanyo DL-3147-241 Specifications

Ordering number : EN5863A

DL-3147-141(-241)

Red Laser Diode

DL-3147-141(-241)

Index Guided AlGaInP Laser Diode

Overview

DL-3147-141(-241) is index guided 645 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low threshold current and high operating temperature are achieved by a strained multiple quantum well active layer. DL-3147-141(-241) is suitable for applications such as bar-code scanners, optical disc systems and other optical information systems.

Features

∙ Short wavelength

: 645 nm (Typ.)

∙ Low threshold current

: Ith = 45 mA (Typ.)

High operating temperature : 5 mW at 60°C

TE mode

Absolute Maximum Ratings at Tc=25°C

Parameter

 

Symbol

Ratings

Unit

 

 

 

 

 

Light Output

 

Po

7

mW

 

 

 

 

 

Reverse Voltage

Laser

VR

2

V

 

 

 

PIN

 

30

 

 

 

 

 

 

Operating Temperature

Topr

---10 to +60

°C

 

 

 

 

 

Storage Temperature

Tstg

---40 to +85

°C

 

 

 

 

 

Electrical and Optical Characteristics at Tc=25°C

Package Dimensions

0

Tolerance : ±0.2

ø5.6 – 0.025

Unit

: mm

ø4.4

ø3.55 ±0.1

ø1.6

Effective window diameter 1.0min.

 

 

1

 

 

3

 

 

 

 

2

 

Top view

 

 

 

 

 

 

 

 

 

 

1.0±0.1

 

 

 

 

 

 

0.4±0.1

 

 

0.25

 

 

 

LD facet

1.27±0.08

 

 

 

1.2±0.1

3.5±0.5

0.5max.

 

 

 

 

3–ø0.45 ±0.1

±1.06.5

 

 

 

 

 

ø1.4max.

 

Pin No.

1

2

3

ø2.0

 

5.6mm ø stem

Electrical Connection

1

3

 

1

3

LD

 

PD

LD

PD

 

2

 

 

2

2 power supply system + power supply system

-141

-241

Parameter

 

Symbol

Condition

Min.

Typ.

Max.

Unit

 

 

 

 

 

 

 

 

 

Threshold Current

 

Ith

CW

--

45

65

mA

 

 

 

 

 

 

 

 

 

Operating Current

 

Iop

Po=5mW

---

60

80

mA

 

 

 

 

 

 

 

 

 

Operating Voltage

 

Vop

Po=5mW

---

2.2

2.5

V

 

 

 

 

 

 

 

 

 

Lasing Wavelength

 

λ p

Po=5mW

--

645

655

nm

Beam )

Perpendicular

 

θ

Po=5mW

25

30

40

deg.

Divergence

Parallel

 

θ //

Po=5mW

6

7.5

10

deg.

Off Axis

Perpendicular

 

θ

--

--

--

±3

deg.

Angle

Parallel

 

θ //

--

---

---

±2

deg.

Differential Efficiency

 

dPo/dIop

---

0.15

0.35

--

mW/mA

 

 

 

 

 

 

 

 

 

Monitoring Output Current

 

Im

Po=5mW

0.05

0.15

--

mA

 

 

 

 

 

 

 

 

 

Astigmatism

 

As

Po=5mW

---

8

--

mm

) Full angle at half maximum

note : The above product specifications are subject to change without notice.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N2798 GI / N2897 GI, (IM) No.5863 1/3

Sanyo DL-3147-241 Specifications

DL-3147-141(-241)

Characteristics

Output power vs. Forward current

 

6

 

 

 

 

 

 

 

 

 

 

60°C

 

(mW)

5

25°C

50°C

 

 

 

 

 

 

 

 

 

 

 

 

Po

4

 

 

 

 

 

 

 

 

 

 

 

power

3

 

 

 

 

 

 

 

 

 

 

 

Output

2

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

0

100

 

 

0

150

Forward current IF (mA)

 

 

Monitor current vs. Output power

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(mA)Im

 

 

Tc=25°C

 

 

 

 

 

0.4

 

Vr(PD)=5V

 

 

 

 

 

 

 

 

 

 

 

 

current

0.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

Monitor

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

0

1

2

3

4

5

Output power Po (mW)

Lasing wavelength vs. Temperature

(nm)pλ

655

Po=5mW

 

wavelength

650

645

Lasing

 

640

 

 

 

 

 

 

0

10

20

30

40

50

60

Temperature Tc (°C)

Threshold current vs. Temperature

(mA)

100

 

 

 

 

 

 

80

 

 

 

 

 

 

 

 

 

 

 

 

 

Ith

60

 

 

 

 

 

 

 

 

 

 

 

 

 

current

40

 

 

 

 

 

 

Threshold

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

0

10

20

30

40

50

60

Temperature Tc (°C)

Beam divergence

 

1.0

 

 

 

 

 

 

 

Po=5mW

 

 

 

 

intensity

0.8

Tc=25°C

 

 

θ

0.6

 

 

 

 

 

Relative

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

θ //

 

 

 

 

 

 

 

0.2

 

 

 

 

 

0 -40 -30 -20 -10 0 10 20 30 40

Angle θ (deg.)

Output power vs. Lasing wavelength

 

 

Po=5mW

 

Tc=25°C

 

intensity

 

 

 

 

 

Po=3mW

 

 

 

Relative

 

 

 

 

Po=1mW

 

 

 

 

 

 

 

639

641

643

645

647

649

Lasing wavelength λp (nm)

No.5863 2/3

Loading...
+ 1 hidden pages