Sanyo DL-3147-041 Specifications

Ordering number : EN5862A
DL-3147-041
Index Guided AlGaInP Laser Diode
Overview
DL-3147-041 is index guided 645 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low threshold current and high operating temperature are achieved by a strained multiple quantum well active layer. DL-3147-041 is suitable for applications such as bar-code reader, optical disc systems and other optical information systems.
Short wavelength : 645 nm (Typ.)
Low threshold current : Ith = 45 mA (Typ.)
High operating temperature : 5 mW at 60°C
TE mode
Absolute Maximum Ratings at Tc=25°C
Parameter Symbol Ratings Unit
Light Output Po 5 mW
Reverse Voltage
Laser
VR
PIN 30
2
V
Red Laser Diode
DL-3147-041
Package Dimensions
0 ø5.6– 0.025
ø4.4
ø3.55±0.1
ø1.6
Effective window diameter 1.0min.
1 3
2
1.0±0.1
0.25
1.27±0.08
0.5max.
Pin No.
5.6mm ø stem
Electrical Connection
LD facet
ø1.4max.
3–ø0.45±0.1
123
ø2.0
13
Tolerance : ±0.2 Unit : mm
Top view
0.4±0.1
1.2±0.1
3.5±0.5
6.5±1.0
Operating Temperature T opr ---10 to +60 °C
LD PD
Storage T emperature Tstg ---40 to +85 °C
2
Electrical and Optical Characteristics at Tc=25°C
– power supply system
Parameter Symbol Condition Min. Typ. Max. Unit
Threshold Current Ith CW 25 45 60 mA Operating Current Iop Po=5mW 40 60 80 mA Operating Voltage Vop Po=5mW 2.0 2.2 2.5 V
Lasing W avelength
Beam ) Perpendicular
λ
p Po=5mW 635 645 655 nm
θ
Po=5mW 25 30 40 deg.
Divergence Parallel q // Po=5mW 7.0 7.5 10 deg. Off Axis Perpendicular θ ⊥ ---------±3 deg. Angle Parallel θ // -----------±2 deg.
Differential Efficiency dPo/dIop --- 0.15 0.35 0.8 mW/mA
Monitoring Output Current Im Po=5mW 0.05 0.15 0.5 mA
Astigmatism As Po=5mW ---8---mm
) Full angle at half maximum note : The above product specifications are subject to change without notice.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2798 GI / N2897 GI, (IM
)
No.5862 1/3
Characteristics
A
A
A
A
A
A
DL-3147-041
Output power vs. Forward current
6 5
4
3
2 1
Output power Po (mW)
0
0
Monitor current vs. Output power
0.5
Tc=25°C Vr(PD)=5V
0.4
25°C
50
Forward current IF (mA)
50°C 60°C
100
150
Threshold current vs. Temperature
100
80 60
40
20
Threshold current Ith (mA)
10
01020304050
Temperature Tc (°C)
Beam divergence
1.0
Po=5mW Tc=25°C
0.8
60
θ ⊥
0.3
0.2
0.1
Monitor current Im (mA)
0
0123
Output power Po (mW)
Lasing wavelength vs. Temperature
655
Po=5mW
650
645
Lasing wavelength λp (nm)
640
0
20 30 50
Temperature Tc (°C)
45
4010
60
0.6
0.4
Relative intensity
0.2
0
-40 -30 -20 -10 0 10 20 30 40 Angle θ (deg.)
Output power vs. Lasing wavelength
Po=5mW
Po=3mW
Relative intensity
639 641 643 645 647 649
Po=1mW
Lasing wavelength λp (nm)
θ
//
Tc=25°C
No.5862 2/3
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