Sanyo DL-3147-021 Specifications
Ordering number : EN5861A
DL-3147-021
Index Guided AlGaInP Laser Diode
Overview
DL-3147-021 is index guided 645 nm (Typ.) AlGaInP laser diode with low
threshold current. The low threshold current is achieved by a strained
multiple quantum well active layer. DL-3147-021 is suitable for laser
pointer.
Features
• Short wavelength : 645 nm (Typ.)
• Low threshold current : Ith = 30 mA (Typ.)
• Low operating voltage : Vop = 2.3 V (Typ.)
• Small package : 5.6 mm ø
Absolute Maximum Ratings at Tc=25°C
Parameter Symbol Ratings Unit
Light Output Po 5 mW
Reverse Voltage
Laser
PIN 30
VR
Operating Temperature T opr ---10 to +40 °C
2
V
Red Laser Diode
DL-3147-021
Package Dimensions
0
ø5.6–0.025
ø4.4
ø3.55±0.1
ø1.6
Effective window diameter 1.0min.
1 3
2
1.0±0.1
0.25
1.27±0.08
0.5max.
Pin No.
5.6mm østem
Electrical Connection
LD facet
ø1.4max.
3–ø0.45±0.1
123
ø2.0
13
Tolerance : ±0.2
Unit : mm
Top view
0.4±0.1
1.2±0.1
3.5±0.5
6.5±1.0
Storage T emperature Tstg ---40 to +85 °C
Electrical and Optical Characteristics at Tc=25°C
LD PD
2
– power supply system
Parameter Symbol Condition Min. Typ. Max. Unit
Threshold Current Ith CW ---3050mA
Operating Current Iop Po=5mW ---4560mA
Operating Voltage Vop Po=5mW --- 2.3 2.6 V
Lasing W avelength
Beam ❊) Perpendicular
Divergence Parallel
λ
p Po=5mW --- 645 660 nm
θ
⊥ Po=5mW 25 30 40 deg.
θ
// Po=5mW 6 7.5 10 deg.
Off Axis Perpendicular ∆θ ⊥ ---------±3 deg.
Angle Parallel ∆θ // ---------±3 deg.
Differential Efficiency dPo/dIop --- 0.2 0.4 0.8 mW/mA
Monitoring Output Current Im Po=5mW 0.15 0.4 0.75 mA
Astigmatism As Po=5mW ---8---µm
❊) Full angle at half maximum note : The above product specifications are subject to change without notice.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2798 GI / N2897 GI, (IM
)
No.5861 1/3
Characteristics
DL-3147-021
Output power vs. Forward current
6
5
4
3
2
1
Output power Po (mW)
0
020
Forward current IF (mA)
Monitor current vs. Output power
0.5
Tc=25°C
Vr(PD)=5V
0.4
25°C
40°C
6040
80
100
Threshold current vs. Temperature
100
80
60
40
20
Threshold current Ith (mA)
10
01020304050
Temperature Tc (°C)
Beam divergence
1.0
Po=5mW
Tc=25°C
0.8
θ ⊥
0.3
0.2
0.1
Monitor current Im (mA)
0
0123
Output power Po (mW)
Lasing wavelength vs. Temperature
654
652
650
648
646
644
Lasing wavelength λp (nm)
642
Po=5mW
0
Temperature Tc (°C)
20 30
45
4010
0.6
0.4
θ
Relative intensity
0.2
0
-40 -30 -20 -10 0 10 20 30 40
Angle θ (deg.)
//
Output power vs. Lasing wavelength
Po=5mW
Po=3mW
Relative intensity
641 645 647 649 651
Po=1mW
Lasing wavelength λp (nm)
Tc=25°C
No.5861 2/3
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