Ordering number : EN5854A
DL-3038-023 |
Red Laser Diode |
DL-3038-023
AlGaInP Laser Diode
Overview |
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Package Dimensions |
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DL-3038-023 is 635 nm (Typ.) AlGaInP laser diode with low threshold current. |
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Tolerance : ±0.2 |
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The low threshold current and short wavelength are achieved by use of a strained |
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ø9.0 – 0.03 |
Unit |
: mm |
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multiple quantum well active layer. The lasing wavelength is 635 nm which is 8 |
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ø5.35 |
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ø4.75 ±0.15 |
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times brighter than 670 nm lasers. DL-3038-023 is suitable for battery powered |
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ø2.1 |
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laser pointers due to its low operating current and voltage. |
Effective window diameter 1.0min. |
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3 |
Top view |
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Features |
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2 |
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∙ Short wavelength |
: 635 nm (Typ.) |
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1.0±0.1 |
0.1 |
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∙ Low threshold current |
: Ith = 20 mA (Typ.) |
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0.45± |
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∙ Output power |
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: 3 mW CW |
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2.45±0.15 |
0.3 |
LD facet |
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∙ Low operating voltage |
: Vop = 2.2 V (Typ.) |
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±1.50.1 |
±0.35.0 |
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0.5max. |
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3–ø0.45 ±0.1 |
±1.0 |
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ø1.4max. |
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10 |
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Absolute Maximum Ratings at Tc=°C |
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Pin No. 1 2 3 |
ø2.54 |
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Parameter |
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Symbol |
Ratings |
Unit |
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9.0mm ø stem (Red) |
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Light Output |
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Po |
3 |
mW |
Electrical Connection |
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Reverse Voltage |
Laser |
VR |
2 |
V |
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1 |
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3 |
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PIN |
30 |
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Operating Temperature |
Topr |
-10 to +40 |
°C |
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LD |
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PD |
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Storage Temperature |
Tstg |
-40 to +85 |
°C |
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Electrical and Optical Characteristics at Tc=25°C |
– power supply system |
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Parameter |
Symbol |
Condition |
Min. |
Typ. |
Max. |
Unit |
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Threshold Current |
Ith |
CW |
- |
20 |
40 |
mA |
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Operating Current |
Iop |
Po=3mW |
- |
25 |
45 |
mA |
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Operating Voltage |
Vop |
Po=3mW |
- |
2.2 |
2.4 |
V |
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Lasing Wavelength |
λ p |
Po=3mW |
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635 |
640 |
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Beam ) |
Perpendicular |
θ |
Po=3mW |
25 |
35 |
40 |
deg. |
Divergence |
Parallel |
θ // |
Po=3mW |
6 |
8 |
10 |
deg. |
Off Axis |
Perpendicular |
θ |
- |
- |
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±3 |
deg. |
Angle |
Parallel |
θ // |
- |
- |
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±3 |
deg. |
Differential Efficiency |
dPo/dIop |
- |
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0.5 |
- |
mW/mA |
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Monitoring Output Current |
Im |
Po=3mW |
0.1 |
0.2 |
0.6 |
mA |
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Astigmatism |
As |
Po=3mW |
- |
8 |
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μm |
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) Full angle at half maximum |
note : The above product specifications are subject to change without notice. |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2798 GI / N2897 GI, (IM) No.5854 1/3
DL-3038-023
Characteristics
Output power vs. Forward current
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4 |
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(mW) |
3 |
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25°C |
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40°C |
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Po |
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power |
2 |
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Output |
1 |
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0 |
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0 |
20 |
40 |
60 |
80 |
100 |
Forward current IF (mA)
Monitor current vs. Output power
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0.5 |
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(mA)Im |
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Tc=25°C |
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0.4 |
Vr(PD)=5V |
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current |
0.3 |
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0.2 |
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Monitor |
0.1 |
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0 |
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0 |
1 |
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3 |
Output power Po (mW)
Lasing wavelength vs. Temperature
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639 |
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(nm)pλ |
637 |
Po=3mW |
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wavelength |
638 |
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636 |
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635 |
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Lasing |
634 |
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633 |
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632 |
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10 |
15 |
20 |
25 |
30 |
35 |
40 |
Temperature Tc (°C)
Threshold current vs. Temperature
(mA) |
100 |
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80 |
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Ith |
60 |
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current |
40 |
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Threshold |
20 |
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10 |
10 |
20 |
30 |
40 |
50 |
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Temperature Tc (°C)
Beam divergence
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1.0 |
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Po=3mW |
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intensity |
0.8 |
Tc=25°C |
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θ |
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Relative |
0.6 |
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0.4 |
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θ // |
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0.2 |
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0 -40 -30 -20 -10 0 10 20 30 40
Angle θ (deg.)
Output power vs. Lasing wavelength
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Po=3mW |
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intensity |
Po=2mW |
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Relative |
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Po=1mW |
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630 |
632 |
634 |
636 |
638 |
640 |
Lasing wavelength λp (nm)
No.5854 2/3