SANYO DCB010 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : EN1895B

DCB010

Silicon Epitaxial Planar Type (Cathode Common)

DCB010

Very High-Speed Switching Diode

Features

•

Ideally suited for use in hybrid ICs because
of very small-sized package.

• Fast switching speed.

• Small interterminal capacitance.

Electrical Connection

Cathode

3

Package Dimensions

unit : mm

1169A

[DCB010]

0.4

3

0.95

0.95

1

1.9

2.9

0.5

2.5

1.5

2

0.5

0.16

0 to 0.1

1 : Anode
2 : Anode
3 : Cathode

21

(Top view)

Anode Anode

1.1

0.8

SANYO : CP

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Peak Reverse Voltage V
Reverse Voltage V
Peak Forward Current I

Average Rectified Current I

Surge Current (1µs) I

Allowable Power Dissipation P 200 mW
Junction T emperature Tj 125 °C
Storage T emperature T stg --55 to +125 °C

RM

R

FM

IFM❈ 450 mA

O

IO❈ 150 mA
FSM

I

❈ 6A

FSM

❈ : Total value

85 V
80 V

300 mA

100 mA

4A

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

12000 GI IM / 2279TA, TS

No.1895-1/3

DCB010

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions min typ max Unit

Forward Voltage V

Reverse Current I

F1

V

F2

V

F3

R1

I

R2

IF=1mA 0.60 V
IF=10mA 0.72 V
IF=100mA 1.20 V
VR=30V 0.1 µA

VR=80V 0.5 µA
Interterminal Capacitance C VR=0, f=1MHz 3.0 pF
Reverse Recovery Time t

rr

IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp 4.0 ns

Marking : W6

Reverse Recovery Time Test Circuit

0.01µF

--6V

DUT

0

50Ω

2kΩ

50Ω

IF=10mA

Irp

0.1Irp

50ns

IF -- V

25°C

F

--25°C

3

10

5
2

2

10

5
2

-- mA

F

10

5
2

1.0
5

2

Forward Current, I

--1

10

5
2

--2

10

0 0.2 0.4 0.6 0.8 1.0 1.2

Ta=100°C

Forward Voltage, VF -- V

trr -- I

100

-- ns
rr

Reverse Recovery Time, t

1.0

7
5

3
2

10

7
5

3
2

7
5

0.1

352

1.0

F

352

10 100

Forward Current, IF -- mA

t

rr

IR -- V

75°C

50°C

25°C

C -- V

R

R

23 5 2

10 100

10

5
2

1.0
5

-- µA

R

2

--1

10

5
2

--2

10

Reverse Current, I

5
2

--3

10

0 20406080100

IT02037 IT02038

2.4

2.0

1.6

1.2

0.8

0.4

Interterminal Capacitance, C -- pF

352

IT02039 IT02040

0

0.1

23 5

Ta=100°C

Reverse Voltage, VR -- V

23 5

1.0

Reverse Voltage, VR -- V

f=1MHz

No.1895-2/3