SANYO DBD10G Datasheet
DBD10
No.7030-1/3
Features
•
Plastic molded structure.
• Peak reverse voltage : V
RM
=200V, 600V.
• A verage rectified current : I
O
=1.0A.
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7030A
DBD10
Package Dimensions
unit : mm
1314 Surface mount type (TM emboss taping)
[DBD10]
N0901 GI IM / 73001 GI IM
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Diffused Junction Silicon Diode
1.0A Single-Phase Bridge Rectifier
6.5
1.0
1.0
10.0
C0.8
2.50.1
6.8
3.0
1.3 1.3
0.25
SANYO : DBD10-TM
--
∼∼
+
Package Dimensions
unit : mm
1313
[DBD10]
7.62
max15°max15°
6.5
3.2
3.7max
0.55
C0.8
0.25
2.5
5.0
6.8
SANYO : DBD10
DBD10
No.7030-2/3
1.0 10
0
10
20
30
40
50
23 5723 57
100
I
FSM
-- n
50Hz
0
1.2
0
0.6
0.4
0.2
1.0
0.8
16020 40 60 80 100 120 140
I
O
-- Ta
0.01
0.2 0.4 0.6 0.8 1.00
0.1
10
7
5
3
2
1.0
7
5
3
2
7
5
3
2
1.61.2 1.4
I
F
-- V
F
IT03617 IT03618
IT03619
0
0
0.5
1.0
1.5
2.0
3.0
2.5
0.2 0.4 0.6 0.8 1.0 1.2 1.4
PF -- I
O
IT03620
Ta=150°C
25°C
Forward Voltage, V
F
-- V
Number of Cycle at 50Hz -- n
Forward Current, I
F
-- ASurge Forward Current, I
FSM
-- A
Average Forward Current, I
O
-- A
Average Forward Current, I
O
-- AAverage Forward Power Dissipation, P
F
-- W
Ambient Temperature, Ta -- °C
Resistive load
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions
Ratings
Unit
DBD10C DBD10G
Peak Reverse Voltage V
RM
200 600 V
Average Rectified Current I
O
Ta=25°C → 1.0 A
Surge Forward Current I
FSM
50Hz sine wave 1cycle → 30 A
Junction T emperature Tj → 150 °C
Storage T emperature T stg → --40 to +150 °C
Electrical Characteristics at T a=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Forward Voltage V
F
IF=0.5A 1.05 V
Reverse Current I
R
VR : At each V
RM
10 µA
Thermal Resistance Rth(j-l) Junction-Lead 15 °C / W
Thermal Resistance Rth(j-a) Junction-Ambient 68 °C / W
Loading...