Datasheet CPH6406 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6418

CPH6406

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : FB

D

D

R
R

Package Dimensions

unit:mm

2151A

[CPH6406]

2.8

0.9

0.15

0.05

1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6

sgnitaR

nimpytxam

Continued on next page.

2.9

5

6

1

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %121A

PD

Mounted on a ceramic board (900mm2×0.8mm)

I

V,Am1=

0=06V

SG

V,V06=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A5.1=6.26.3S

D

V01=511051mΩ

SG

V4=051012mΩ

SG

zHM1=f,V02=022Fp
zHM1=f,V02=57Fp
zHM1=f,V02=52Fp

SSD
SSG

)ffo(SG

1IDV,A5.1=

)no(SD

2IDV,A1=

)no(SD

SSD)RB(

D

V

SD

V

SG

V

SD

SD
SD
SD

4

1.6 0.60.6

23

0.95

0.7 0.2

0.4

0.2

06V
02±V
3A

6.1W

˚C
˚C

tinU

30300TS (KOTO) TA-2311 No.6418-1/4

CPH6406

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A3=

0=38.02.1V

SG

Switching Time Test Circuit

VDD=30V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=1.5A

RL=20Ω

V

OUT

tiucriCtseTdeificepseeS7sn
tiucriCtseTdeificepseeS8sn
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS92sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A3=6.8Cn
A3=3.1Cn
A3=8.1Cn

tinU

3.5

3.0

2.5

–A

D

2.0

1.5

1.0

Drain Current, I

0.5

250

P.G

0

0

50Ω

I

-- V

D

4.0V

5.0V

3.5V

3.0V

6.0V

8.0V

10.0V

0.4

0.8 1.2 1.6 2.00.2 0.6 1.0 1.4 1.8

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

S

DS

CPH6406

GS

V

GS

=2.5V

IT01245

Ta=25°C

I

-- V

–A

D

Drain Current, I

6

VDS=10V

5

4

3

2

1

D

GS

°C

--25

Ta=75

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

25°C

Gate-to-Source Voltage, VGS–V

300

RDS(on) -- Ta

°C

IT01246

200

– mΩ

ID=1.0A

150

DS(on)

100

50

Static Drain-to-Source

On-State Resistance, R

0

0 2 4 6 8 10 12

1.5A

Gate-to-Source Voltage, V

14 16 18 20

GS

–V

IT01247

250

– mΩ

200

DS(on)

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

--40 --20 0 20 40 60 80 100 120 140 160

--60

=4V

GS

=1.0A, V

I

D

I

D

=1.5A, V

GS

=10V

Ambient Temperature, Ta – °C

IT01248

No.6418-2/4

y

fs|–S

Forward Transfer Admittance, |

Switching Time, SW Time – ns

V

–

GS

Gate-to-Source Voltage, V

1.0

0.1

0.01

100

1.0

2.0

10

0.001

10

10

7
5

3
2

7
5

3
2

7
5

3
2

2

7
5

3
2

7
5

3
2

9

8

7

6

5

4
3

2

1
0

VDS=10V

t

f

td(on)

t

r

0.1

VDS=10V
ID=3A

0

CPH6406

yfs -- I

Ta=--25°C

Drain Current, ID–A

SW Time -- I

t

(off)

d

23 5772357

Drain Current, ID–A

VGS -- Qg

Total Gate Charge, Qg – nC

P

D

D

25°C

75°C

0.10.01 1.0

D

1.0

-- Ta

23 5723 5723 5723 57

IT01249

VDD=30V
VGS=10V

IT01251

IT01253

10

7
5

3
2

–A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01

10

10

10825679143

0.2 0.60.50.40.3 0.7 0.8 0.9 1.0 1.1 1.2

1000

7
5

3
2

100

7
5

Ciss, Coss, Crss – pF

3
2

10

0

10 20

3
2

I

=12A

DP

10

7
5

I

=3A

D

3

–A

2

D

1.0

,I

7
5

Operation in

3

this area is

2

limited by RDS(on).

0.1

Drain Current

7
5

Ta=25

°C

Single pulse
Mounted on a ceramic board (900mm

23 57 23 57 23 57

0.1

0.01

3
2

I

-- V

F

SD

°C

Ta=75

25°C

°C

--25

Diode Forward Voltage, VSD–V

Ciss, Coss, Crss -- V

DS

Ciss

Coss

Crss

Drain-to-Source Voltage, VDS–V

A S O

1ms

10ms

100ms

DC operation

2

×0.8mm)

1.0 10 100

Drain-to-Source Voltage, VDS–V

V

GS

f=1MHz

<10µs

100µs

= 0

IT01250

IT01252

IT01254

6030 40 50

–W

1.6

D

1.5

1.0

0.5

Allowable Power Dissipation, P

0020 40

Mounted on a ceramic board (900mm

2

×0.8mm)

60

80 100 120

Ambient Temperature, Ta – °C

140 160

IT01255

No.6418-3/4

CPH6406

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6418-4/4