SANYO CPH6406 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6418

CPH6406

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : FB

D

D

R
R

Package Dimensions

unit:mm

2151A

[CPH6406]

2.8

0.9

0.15

0.05

1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6

sgnitaR

nimpytxam

Continued on next page.

2.9

5

6

1

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %121A

PD

Mounted on a ceramic board (900mm2×0.8mm)

I

V,Am1=

0=06V

SG

V,V06=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A5.1=6.26.3S

D

V01=511051mΩ

SG

V4=051012mΩ

SG

zHM1=f,V02=022Fp
zHM1=f,V02=57Fp
zHM1=f,V02=52Fp

SSD
SSG

)ffo(SG

1IDV,A5.1=

)no(SD

2IDV,A1=

)no(SD

SSD)RB(

D

V

SD

V

SG

V

SD

SD
SD
SD

4

1.6 0.60.6

23

0.95

0.7 0.2

0.4

0.2

06V
02±V
3A

6.1W

˚C
˚C

tinU

30300TS (KOTO) TA-2311 No.6418-1/4

CPH6406

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A3=

0=38.02.1V

SG

Switching Time Test Circuit

VDD=30V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=1.5A

RL=20Ω

V

OUT

tiucriCtseTdeificepseeS7sn
tiucriCtseTdeificepseeS8sn
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS92sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A3=6.8Cn
A3=3.1Cn
A3=8.1Cn

tinU

3.5

3.0

2.5

–A

D

2.0

1.5

1.0

Drain Current, I

0.5

250

P.G

0

0

50Ω

I

-- V

D

4.0V

5.0V

3.5V

3.0V

6.0V

8.0V

10.0V

0.4

0.8 1.2 1.6 2.00.2 0.6 1.0 1.4 1.8

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

S

DS

CPH6406

GS

V

GS

=2.5V

IT01245

Ta=25°C

I

-- V

–A

D

Drain Current, I

6

VDS=10V

5

4

3

2

1

D

GS

°C

--25

Ta=75

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

25°C

Gate-to-Source Voltage, VGS–V

300

RDS(on) -- Ta

°C

IT01246

200

– mΩ

ID=1.0A

150

DS(on)

100

50

Static Drain-to-Source

On-State Resistance, R

0

0 2 4 6 8 10 12

1.5A

Gate-to-Source Voltage, V

14 16 18 20

GS

–V

IT01247

250

– mΩ

200

DS(on)

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

--40 --20 0 20 40 60 80 100 120 140 160

--60

=4V

GS

=1.0A, V

I

D

I

D

=1.5A, V

GS

=10V

Ambient Temperature, Ta – °C

IT01248

No.6418-2/4