SANYO CPH3303 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel MOS Silicon FET

Ultrahigh-Speed Switching Applications

Ordering number:EN5988

CPH3303

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

2.9

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : JC

D

D

R
R

Package Dimensions

unit:mm

2152

[CPH3303]

0.4

3

1.6 0.60.6

1

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %14.6–A

PD

Mounted on a ceramic board (900mm2×0.8mm)

SSD
SSG

)no(SD
)no(SD

I

SSD)RB(

D

V
V
V

)ffo(SG

1I

D

2I

D

V,Am1–=

0=02–V

SG

V,V02–=

SD
SG
SD

SD
SD
SD

0=01–Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01–=

Am1–=4.0–4.1–V

D

A8.0–=6.14.2S

D

V,A8.0–=

V4–=542513mΩ

SG

V,A2.0–=

V5.2–=043084mΩ

SG

zHM1=f,V01–=081Fp
zHM1=f,V01–=09Fp
zHM1=f,V01–=34Fp

2

1.9

0.9

0.7 0.2

0.15

0 to 0.1

2.8

1 : Gate
2 : Source
3 : Drain

SANYO : CPH3

sgnitaR

nimpytxam

Continued on next page.

0.2

02–V
01±V

6.1–A

0.1W

˚C
˚C

tinU

40599TS (KOTO) TA-1498 No.5988-1/4

CPH3303

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

I

DS

S

V,A6.1–=

SG

Switching Time Test Circuit

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS52sn
tiucriCtseTdeificepseeS23sn
tiucriCtseTdeificepseeS23sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

0=0.1–5.1–V

nimpytxam

A6.1–=5.9Cn

D

A6.1–=1Cn

D

A6.1–=5.1Cn

D

sgnitaR

tinU

V

IN

0V

–4V

V

PW=10µs
D.C.≤1%

P.G

-1.8

-1.6

-1.4

-1.2

–A

D

-1.0

-0.8

-0.6

Drain Current, I

-0.4

-0.2

0

0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0

IN

–8.0V

–10V

Drain-to-Source Voltage, VDS–V

10

7
5

fs|–S

y

3
2

1.0
7

5

3
2

|

Forward Transfer Admittance, |

0.1

-0.01

Drain Current, ID–A

VDD=–10V

ID=–0.8A
RL=12.5Ω

D

G

CPH3303

50Ω

ID-

–6.0V

y

fs

–4.0V

|

S

V

DS

–3.0V

-

–2.5V

I

D

°C

Ta=–25

-0.1 -1.0

V

75°C

OUT

–2.0V

=–1.5V

V

GS

VDS=–10V

°C

25

-3.5

VDS=–10V

-3.0

-2.5

–A

D

-2.0

-1.5

-1.0

Drain Current, I

-0.5

0

0

1000

900

800

–mΩ

700

600

DS(on)

500

I

=–0.2A

D

400

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

023 57 23 57 23 5

-1 -2 -3 -4 -5 -6 -7 -8 -9 -10

ID-

V

GS

25°C

°C

75°C

Ta=–25

Gate-to-Source Voltage, VGS–V

R

DS(on)

-

V

GS

ID=–0.8A

Gate-to-Source Voltage, VGS–V

Ta=25°C

No.5988-2/4