Sanyo 2SD1876 Specifications

Ordering number:EN2423

 

 

 

 

NPN Triple Diffused Planar Silicon Transistor

 

 

 

 

2SD1876

 

 

 

 

 

Color TV Horizontal Deflection

 

 

 

 

Output Applications

 

 

 

 

 

 

Applications

Package Dimensions

· Color TV horizontal diflection output.

unit:mm

· Color display horizontal deflection output.

2039D

Features

· High speed (t=100ns). f

· High breakdown voltage (V =1500V).

CBO

·High reliability (adoption of HVP process).

·On-chip damper diode.

Specifications

[2SD1876]

16.0

5.6

3.4

3.1

 

 

 

5.0

8.0

 

 

21.0

 

 

22.0

2.0

4.0

 

2.8

 

 

 

 

 

 

 

 

 

 

2.0

 

2.0

 

 

 

1.0

20.4

 

 

 

 

 

0.6

 

 

 

 

 

 

1

2

3

 

1

: Base

 

 

 

 

 

3.5

 

2

: Collector

 

 

 

 

3

: Emitter

5.45

 

5.45

SANYO : TO-3PML

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

 

 

Ratings

 

Unit

 

 

 

 

 

 

 

 

 

Collector-to-Base Voltage

VCBO

 

 

 

 

 

1500

V

Collector-to-Emitter Voltage

VCEO

 

 

 

 

 

800

V

Emitter-to-Base Voltage

VEBO

 

 

 

 

 

6

V

Collector Current

IC

 

 

 

 

 

3

A

Collector Current (Pulse)

ICP

 

 

 

 

 

12

A

Collector Dissipation

PC

 

 

 

 

 

50

W

Junction Temperature

Tj

 

 

 

 

 

150

˚C

 

 

 

 

 

 

 

 

Storage Temperature

Tstg

 

 

 

–55 to +150

˚C

 

 

 

 

 

 

 

 

 

Electrical Characteristics at Ta = 25˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

Conditions

 

 

Ratings

 

Unit

 

 

 

 

 

 

 

 

min

typ

 

max

 

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

ICES

VCE=1500V

 

 

 

 

1.0

mA

ICBO

VCB=800V

 

 

 

 

10

µA

 

 

 

 

 

Collector-to-Emitter Sustain Voltage

VCEO(sus)

IC=100mA, IB=0

800

 

 

 

V

Emitter Cutoff Current

IEBO

VEB=4V

40

 

 

130

mA

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=2A, IB=0.6A

 

 

 

 

5

V

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=2A, IB=0.6A

 

 

 

 

1.5

V

DC Current Gain

hFE1

VCE=5V, IC=0.5A

8

 

 

 

 

hFE2

VCE=5V, IC=2A

3

 

 

6

 

 

 

 

 

Diode Forward Voltage

VF

IEC=3A

 

 

 

 

2.0

V

Fall Time

tf

IC=3A, IB1=0.8A, IB2=–1.6A

 

 

0.1

 

0.3

µs

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

22599TH (KT)/2207TA, TS No.2423–1/3

Sanyo 2SD1876 Specifications

2SD1876

Switching Time Test Circuit

No.2423–2/3

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