Sanyo 2SD1666 Specifications

Page 1
Ordering number : ENN3031A
2SB1133 / 2SD1666
PNP / NPN Triple Diffused Planar Silicon Transistors
2SB1133 / 2SD1666
Low-Frequency
General-Purpose Amplifier Applications
Features
• Wide ASO(Adoption of MBIT process).
•
Micaless package facilitating easy mounting.
• High reliability.
Specifications
Collector-to-Base Voltage V Collector-to-Emitter Voltage V Emitter-to-Base Voltage V Collector Current I Collector Current (Pulse) I
Collector Dissipation P Junction T emperature Tj 150 °C
Storage T emperature T stg −40 to +150 °C
Parameter Symbol Conditions Ratings Unit
CBO CEO EBO
C
CP
C
Tc=25°C25W
Package Dimensions
unit : mm
2041A
[2SB1133 / 2SD1666]
10.0
3.2
18.1
5.6
1
2.55
2.55
1.6
1.2
0.75
23
2.55
2.55
3.5
7.2
2.4
4.5
2.8
16.0
2.4
0.7
14.0
1 : Base 2 : Collector 3 : Emitter
SANYO : TO-220ML
(−)60 V (−)60 V
(−)6 V (−)3 A (−)8 A
2W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I Emitter Cutoff Current I
DC Current Gain
* : The 2SB1133 / 2SD1666 are classified by 0.5A hFE as follows :
Rank Q R S
h
70 to 140 100 to 200 140 to 280
FE
CBO EBO
hFE(1) VCE=(--)5V, IC=(--)0.5A *70 *280 hFE(2) VCE=(--)5V, IC=(--)3A 20
VCB=(--)40V, IE=0 (--)100 µA VEB=(--)4V, IC=0 (--)100 µA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
Continued on next page.
72501 GI IM
Unit
No.3031-1/4
Page 2
2SB1133 / 2SD1666
Continued from preceding page.
Parameter Symbol Conditions
Gain-Bandwidth Product f Output Capacitance Cob VCB=(--)10V, f=1MHz (110)60 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)2A, IB=(--)0.2A (--)0.6 (--)1 V Base-to-Emitter Saturation Voltage V Collector-to-Base Breakdown Voltage V Collector-to-Emitter Breakdown Voltage V Emitter-to-Base Breakdown Voltage V
I
-- V
--3.0
--2.5
-- A
--2.0
C
--45mA
--50mA
C
CE
--40mA
BE (BR)CBOIC (BR)CEOIC (BR)EBOIE
--35mA
--30mA
--25mA
--20mA
VCE=(--)5V, IC=(--)0.5A (40)8 MHz
T
VCE=(--)5V, IC=(--)0.5A (--)0.7 (--)1 V
=(--)1mA, IE=0 (--)60 V =(--)5mA, RBE=∞ (--)60 V
=(--)1mA, IC=0 (--)6 V
3.0
2.5
-- A
2.0
C
45mA
50mA
--15mA
--1.5
1.5
--10mA
--1.0
Collector Current, I
--0.5
--5mA
1.0
Collector Current, I
0.5
Ratings
min typ max
I
-- V
C
40mA
CE
35mA
30mA
25mA
20mA
15mA
10mA
5mA
Unit
0
0 --1 --2 --3 --4 --6--5
IB=0
Collector to Emitter Voltage, VCE -- V
I
-- VBE(on)
--3.6
--3.2
--2.8
-- A
--2.6
C
--2.0
--1.6
--1.2
Collector Current, I
--0.8
--0.4
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
C
°C
Ta=120
°C
°C
25
--40
Base to Emitter On Voltage, VBE(on) -- V
h
-- I
FE
25
FE
°C
°C
5
Ta=120
3
2
C
IT03736
2SB1133 VCE= --5V
IT03738
2SB1133 VCE= --5V
0
0 1.0 2.0 3.0 4.0 6.05.0
IB=0
Collector to Emitter Voltage, VCE -- V
I
-- VBE(on)
3.6
3.2
2.8
-- A
2.6
C
2.0
1.6
1.2
Collector Current, I
0.8
0.4
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
C
°C
Ta=120
°C
°C
25
--40
Base to Emitter On Voltage, VBE(on) -- V
h
-- I
FE
25
FE
°C
°C
5
3
2
Ta=120
C
IT03737
2SD1666 VCE=5V
IT03739
2SD1666 VCE=5V
100
7
DC Current Gain, h
5
3
--0.01
23 57 23 5 23 577
°C
--40
--0.1 --1.0
Collector Current, IC -- A
100
°C
DC Current Gain, h
5
3
IT03740 IT03741
0.01
--40
2355
235 235
0.1
Collector Current, IC -- A
1.0
No.3031-2/4
Page 3
2
2SB1133 IC/IB=10
--1.0
VCE(sat) -- I
2SB1133 / 2SD1666
C
2
1.0
2SD1666 IC/IB=10
VCE(sat) -- I
C
5
(sat) -- V
3
CE
2
--0.1
5
Collector to Emitter
Saturation V oltage, V
3 2
777
--0.01 --0.1 --1.0
Ta=120°C
--40°C
25°C
23 5 523 23 5
Collector Current, IC -- A
2
--1.0
(sat) -- V
VBE(sat) -- I
C
BE
7
5
Base to Emitter
Saturation V oltage, V
3
5
--0.01 --0.1 --1.0
Ta= --40°C
25°C
120°C
23 5 523 23 5
Collector Current, IC -- A
fT -- I
100
-- MHz T
7
5
3
C
IT03742
2SB1133 IC/IB=10
IT03744
2SB1133 VCE= --5V
5
(sat) -- V
3
CE
2
0.1
5
Collector to Emitter
Saturation V oltage, V
3 2
5
0.01 0.1 1.0
2
1.0
(sat) -- V
BE
7
5
3
Base to Emitter
Saturation V oltage, V
2
5
0.01 0.1 1.0
3
2
-- MHz T
10
7
Ta=120°C
--40°C
25°C
23 5 523 23 5
Collector Current, IC -- A
VBE(sat) -- I
C
IT03743
2SD1666 IC/IB=10
Ta= --40°C
25°C
120°C
23 5 523 23 5
Collector Current, IC -- A
f
-- I
T
C
IT03745
2SD1666 VCE=5V
2
Gain-Bandwidth Product, f
10
5
23 5 523 23
--0.01 --0.1 --1.0
Collector Current, I
10
7
I
CP
5
IC max
3
-- A
2
C
1.0 7 5
3
Collector Current, I
2
2SB1133/2SD1666 (For PNP minus sign is omitted)
0.1
357 23 75
2
Collector to Emitter Voltage, VCE -- V
5
--10
IT03746
C
-- A
A S O
100µs>
C
=25W
1ms
500µs
IT03748
10ms
100ms
DC Operation P
--10 --100
5
3
Gain-Bandwidth Product, f
2
5
23 5 523 23 5
0.01 0.1 1.0
Collector Current, I
28
25 24
-- W
20
C
16
12
8
Collector Dissipation, P
4
0
20 40 60 80 100 120 140 160
0
Case Temperature, Tc -- °C
PC -- Tc
-- A
C
2SB1133/2SD1666
No.3031-3/4
IT03747
IT03749
Page 4
4
3
-- W C
2
1
Collector Dissipation, P
0
0
20
40 60 80 100 120 140 160
Amibient Tamperature, Ta -- °C
2SB1133 / 2SD1666
PC -- Ta
2SB1133/2SD1666
No heat sink
IT03765
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice.
No.3031-4/4
PS
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