Sanyo 2SD1806 Specifications
Ordering number:EN2116B
NPN Epitaxial Planar Silicon Transistor
2SD1806
High-Current Switching Applications
Applications
· Relay control, motor control, switching.
Features
·Low saturation voltage.
·On-chip diode between collector and emitter.
·Small and slim package permitting 2SD1806-applied sets to be made more compact.
Package Dimensions
unit:mm |
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2045B |
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[2SD1806] |
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6.5 |
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2.3 |
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5.0 |
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1.5 |
0.5 |
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4 |
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5.5 |
7.0 |
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0.85 |
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0.7 |
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0.8 |
1.6 |
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1.2 |
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7.5 |
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1 : Base |
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0.6 |
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0.5 |
2 : Collector |
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1 |
2 |
3 |
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3 : Emitter |
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4 : Collector |
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2.3 |
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2.3 |
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SANYO : TP |
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unit:mm |
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2044B |
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6.5 |
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[2SD1806] |
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2.3 |
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5.0 |
1.5 |
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0.5 |
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4 |
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5.5 |
7.0 |
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0.85 |
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2.5 |
0.5 |
1.2 |
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1 |
2 |
3 |
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1 : Base |
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0.6 |
0.8 |
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1.2 |
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2 : Collector |
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0~0.2 |
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3 : Emitter |
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4 : Collector |
2.3 |
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2.3 |
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SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22599TH (KT)/8109MO/5137TA, TS No.2116–1/4
2SD1806
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
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Collector-to-Base Voltage |
VCBO |
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40 |
V |
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Collector-to-Emitter Voltage |
VCEO |
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30 |
V |
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Emitter-to-Base Voltage |
VEBO |
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5 |
V |
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Collector Current |
IC |
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2 |
A |
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Collector Current (Pulse) |
ICP |
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4 |
A |
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Collector Dissipation |
PC |
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1 |
W |
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Tc=25˚C |
15 |
W |
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Junction Temperature |
Tj |
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150 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +150 |
˚C |
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Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Collector Cutoff Current |
ICBO |
VCB=20V, IE=0 |
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1.0 |
µA |
DC Current Gain |
hFE1 |
VCE=0.5V, IC=0.5A |
50 |
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hFE2 |
VCE=0.5V, IC=2A |
50 |
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Gain-Bandwidth Product |
fT |
VCE=2V, IC=0.5A |
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150 |
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MHz |
Output Capacitance |
Cob |
VCB=10V, f=1MHz |
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40 |
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pF |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=2A, IB=40mA |
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0.25 |
0.5 |
V |
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=2A, IB=40mA |
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0.92 |
1.5 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=10µA, IE=0 |
40 |
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V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=10mA, RBE=∞ |
30 |
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V |
Forward Voltage |
VF |
IF=0.3A |
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0.9 |
1.2 |
V |
Resistance between Base and Emitter |
RBE |
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1.0 |
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kΩ |
Electrical Connection
No.2116–2/4
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