SANYO 2SC4868 Technical data

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Wide-Band
Low-Noise Amplifier Applications
Ordering number:EN5043
2SC4868
0.4
Features
· Low noise : NF=1.2dB typ (f=1GHz).
· High gain : S21e2=13dB typ (f=1GHz).
· High cutoff frequency : fT=9.0GHz typ.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
C
Package Dimensions
unit:mm
2018B
[2SC4868]
0.16
3
1
0.95
0.95
1.9
2.9
OBC OEC OBE
0.5
2.5
1.5
2
0.5
0 to 0.1
1 : Base
1.1
0.8
2 : Emitter 3 : Collector SANYO : CP
61V 8V
5.1V 05Am 002Wm
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuO
niaGrefsnarTdrawroF
erugiFesioN
* : The 2SC4868 is classified by 15mA hFE as follows : Marking : GN
h
V
OBC
V
OBE
V
EF
V
T
V
boC
2
V
|e12S|
FNVECI,V5=
I,V01=
BC BE EC EC BC EC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am51=
C
I,V5=
Am51=
C
zHM1=f,V01=
I,V5=
C C
0213060814090725531
zHG1=f,Am51=
zHG1=f,Am5=2.15.2Bd
hFE rank : 3, 4, 5
12099HA (KT)/31395YK (KOTO) TA-0245 No.5043–1/4
sgnitaR
nimpytxam
*06*072
0.9zHG
6.01.1Fp
0131Bd
tinU
2SC4868
No.5043–2/4
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