Page 1
2SC4784
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 10 GHz Typ.
• High gain, low noise figure
PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
Outline
CMPAK
3
1
2
1. Emitter
2. Base
3. Collector
Page 2
2SC4784
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
CBO
I
CEO
EBO
FE
Collector output capacitance Cob — 0.45 0.8 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f
T
Power gain PG 12.0 15.0 — dB VCE = 5 V, IC = 10 mA,
Noise figure NF — 1.2 2.5 dB VCE = 5 V, IC = 5 mA,
Note: Marking is “YA–”.
——10µAVCB = 15 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
50 120 250 VCE = 5 V, IC = 10 mA
7.0 10.0 — GHz VCE = 5 V, IC = 10 mA
15 V
8V
1.5 V
20 mA
100 mW
= 8 V, RBE = ∞
CE
f = 900 MHz
f = 900 MHz
Attention: This is electrostatic sensitve device.
2
Page 3
Maximum Collector Dissipation Curve
120
(mW)
100
C
80
200
FE
160
120
2SC4784
DC Current Transfer Ratio
vs. Collector Current
V = 5V
CE
60
40
20
Collector Power Dissipation P
0 50 100 150
Ambient Temperature Ta (°C)
Gain Bandwidth Product
vs. Collector Current
12
V = 5 V
CE
10
T
8
6
V = 1 V
CE
4
2
Gain Bandwidth Product f (GHz)
0
12 51020 50
Collector Current I (mA)
C
80
V = 1V
CE
40
DC Current Transfer Ratio h
0
0.1
0.2 0.5 1 2
Collector Current I (mA)
5
10 20 50
C
Collector Output Capacitance vs.
Collector to Base Voltage
0.56
I = 0
E
0.52
f = 1 MHz
0.48
0.44
0.40
0.36
Collector Output Capacitance Cob (pF)
0.5
1
Collector to Base Voltage V (V)
2
51020
CB
3
Page 4
2SC4784
Power Gain vs. Collector Current
20
f = 900 MHz
16
V = 5V
CE
12
8
4
Power Gain PG (dB)
0
0.3
1 3 10 30
Collector Current I (mA)
V = 1V
CE
C
Noise Figure vs. Collector Current
5
f = 900 MHz
4
3
V = 5V
CE
2
Noise Figure NF (dB)
1
V = 1V
CE
0
0.3
1 3 10 30
Collector Current I (mA)
C
4
Page 5
2SC4784
S11 Parameter vs. Frequency
1
.8
.6
.4
.2
0
.2 .4.6.8 1.0 2345
1.5
–.2
–.4
–.6
–.8
–1
Condition: V = 5 V , Zo = 50
CE
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
C
(I = 10 mA)
C
S12 Parameter vs. Frequency
90°
120°
150°
180°
–150°
–120°
Condition: V = 5 V , Zo = 50
–90°
CE
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
C
(I = 10 mA)
C
1.5
2
3
10
–3
–2
–1.5
Ω
Scale: 0.04 / div.
60°
–60°
4
–4
5
–5
10
–10
Ω
30°
–30°
0°
180°
–150°
.2
0
–.2
S21 Parameter vs. Frequency
90°
120°
150°
–120°
–90°
Condition: V = 5 V , Zo = 50
CE
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
C
(I = 10 mA)
C
S22 Parameter vs. Frequency
1
.8
.6
1.5
.4
.2 .4 .6.81.0 2 3 4 5
1.5
–.4
–.6
–.8
Condition: V = 5 V , Zo = 50
CE
–1
–1.5
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
C
(I = 10 mA)
C
Scale: 4 / div.
60°
30°
–30°
–60°
Ω
2
3
4
5
10
10
–10
–5
–4
–3
–2
Ω
0°
5
Page 6
2SC4784
S11 Parameter vs. Frequency
1
.8
.6
.4
.2
0
.2 .4 .6 .8 1.0 2 3 4 5
1.5
–.2
–.4
–.6
–.8
–1
Condition: V = 1 V , Zo = 50
CE
200 to 2000 MHz (200 MHz step)
(I = 0.5 mA)
C
(I = 1 mA)
C
S12 Parameter vs. Frequency
90°
120°
150°
180°
–150°
–120°
Condition: V = 1 V , Zo = 50
–90°
CE
200 to 2000 MHz (200 MHz step)
(I = 0.5 mA)
C
(I = 1 mA)
C
1.5
2
3
–2
–1.5
Ω
Scale: 0.06 / div.
60°
–60°
10
–3
4
–4
Ω
5
–5
10
–10
–30°
30°
0°
S21 Parameter vs. Frequency
90°
120°
150°
180°
–150°
–120°
Condition: V = 1 V , Zo = 50
–90°
CE
200 to 2000 MHz (200 MHz step)
(I = 0.5 mA)
C
(I = 1 mA)
C
S22 Parameter vs. Frequency
1
.8
.6
.4
.2
0
.2
.6
.4
1.0
.8
–.2
–.4
–.6
–.8
–1
Condition: V = 1 V , Zo = 50
CE
200 to 2000 MHz (200 MHz step)
(I = 0.5 mA)
C
(I = 1 mA)
C
Scale: 0.8 / div.
60°
–60°
1.5
2
1.5
234
–2
–1.5
30°
0°
–30°
Ω
3
4
5
10
10
5
–10
–5
–4
–3
Ω
6
Page 7
2SC4784
S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 Ω, Emitter Common)
Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
100 0.850 –17.1 13.203 164.8 0.018 80.4 0.965 –10.5
200 0.781 –33.0 12.116 151.3 0.035 72.0 0.898 –19.9
300 0.689 –47.5 10.894 139.0 0.049 65.9 0.815 –27.5
400 0.598 –58.8 9.620 129.5 0.060 62.2 0.735 –32.8
500 0.523 –69.4 8.489 121.6 0.069 59.5 0.667 –36.4
600 0.450 –78.8 7.534 115.1 0.076 57.9 0.610 –38.9
700 0.394 –87.1 6.760 109.9 0.083 57.1 0.563 –40.6
800 0.348 –95.3 6.129 105.1 0.088 57.0 0.523 –42.1
900 0.306 –102.7 5.550 100.7 0.095 56.6 0.493 –42.7
1000 0.278 –109.3 5.113 97.4 0.101 56.8 0.467 –43.5
1100 0.243 –117.8 4.716 94.0 0.107 57.0 0.445 –44.2
1200 0.219 –125.4 4.342 91.0 0.113 56.8 0.428 –44.3
1300 0.203 –132.4 4.057 88.5 0.118 57.1 0.416 –45.1
1400 0.190 –143.7 3.804 85.9 0.124 57.4 0.401 –45.5
1500 0.167 –153.7 3.580 83.8 0.130 57.5 0.390 –45.9
1600 0.171 –163.2 3.391 81.1 0.136 57.8 0.380 –46.6
1700 0.161 –172.5 3.207 79.2 0.143 57.7 0.371 –47.0
1800 0.160 178.6 3.051 77.1 0.149 57.3 0.364 –47.6
1900 0.167 169.4 2.921 75.0 0.155 57.6 0.356 –48.3
2000 0.170 161.4 2.788 73.1 0.161 57.5 0.349 –48.9
7
Page 8
2SC4784
S Parameter (VCE = 5 V, IC = 10 mA, ZO = 50 Ω, Emitter Common)
Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
100 0.730 –25.1 20.636 158.3 0.017 77.3 0.929 –15.0
200 0.622 –46.7 17.551 140.7 0.031 69.3 0.808 –26.3
300 0.508 –64.4 14.512 127.1 0.041 64.0 0.689 –33.0
400 0.417 –77.8 12.064 118.0 0.049 62.8 0.600 –36.8
500 0.349 –89.5 10.223 111.0 0.057 62.1 0.534 –38.7
600 0.295 –100.6 8.803 105.3 0.064 62.1 0.487 –39.2
700 0.256 –110.7 7.735 101.0 0.070 62.9 0.451 –39.3
800 0.223 –120.6 6.899 97.1 0.077 63.4 0.423 –39.6
900 0.195 –129.7 6.178 93.5 0.084 63.6 0.403 –39.4
1000 0.183 –140.7 5.644 90.7 0.091 63.8 0.385 –39.5
1100 0.173 –151.8 5.167 88.0 0.098 64.3 0.372 –39.6
1200 0.154 –160.4 4.743 85.5 0.105 64.6 0.361 –39.6
1300 0.158 –171.4 4.423 83.5 0.112 64.5 0.353 –40.0
1400 0.158 177.6 4.121 81.4 0.119 64.8 0.345 –40.3
1500 0.157 165.9 3.866 79.1 0.126 64.7 0.338 –40.6
1600 0.165 160.7 3.648 77.0 0.133 64.2 0.332 –41.0
1700 0.172 154.4 3.460 75.1 0.141 64.1 0.327 –41.8
1800 0.176 147.9 3.277 73.7 0.148 63.9 0.321 –42.3
1900 0.187 140.9 3.129 71.6 0.155 63.7 0.317 –42.8
2000 0.194 136.0 2.982 69.8 0.162 63.2 0.312 –43.5
8
Page 9
2SC4784
S Parameter (VCE = 1 V, IC = 0.5 mA, ZO = 50 Ω, Emitter Common)
Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
100 0.983 –6.8 1.755 173.2 0.027 84.6 0.995 –4.5
200 0.975 –13.4 1.721 166.6 0.055 79.9 0.987 –8.8
300 0.957 –20.2 1.722 159.4 0.082 75.0 0.974 –13.3
400 0.933 –26.9 1.706 152.9 0.107 70.6 0.956 –17.7
500 0.910 –33.2 1.629 146.3 0.130 66.2 0.937 –21.4
600 0.879 –39.5 1.597 139.8 0.151 61.9 0.913 –25.4
700 0.845 –45.8 1.553 134.0 0.170 58.1 0.890 –28.9
800 0.804 –51.4 1.528 128.1 0.187 54.4 0.862 –32.4
900 0.778 –57.3 1.475 122.6 0.203 51.1 0.838 –35.2
1000 0.739 –62.9 1.432 117.8 0.215 47.6 0.813 –38.4
1100 0.706 –68.6 1.392 112.7 0.227 44.9 0.790 –41.1
1200 0.671 –73.0 1.317 107.8 0.237 42.1 0.767 –43.5
1300 0.643 –78.5 1.286 104.8 0.245 39.7 0.745 –46.1
1400 0.609 –84.4 1.261 100.0 0.252 37.3 0.723 –48.5
1500 0.573 –88.6 1.215 96.4 0.258 35.3 0.702 –50.4
1600 0.553 –94.4 1.186 92.6 0.263 33.1 0.683 –52.6
1700 0.531 –100.1 1.158 88.8 0.267 31.1 0.667 –54.5
1800 0.516 –103.8 1.128 85.7 0.272 29.1 0.650 –56.5
1900 0.485 –109.6 1.098 82.5 0.273 27.7 0.634 –58.4
2000 0.466 –114.5 1.070 78.9 0.275 26.1 0.619 –60.3
9
Page 10
2SC4784
S Parameter (VCE = 1 V, IC = 1 mA, ZO = 50 Ω, Emitter Common)
Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
100 0.962 –8.8 3.376 172.0 0.027 83.7 0.991 –5.9
200 0.950 –17.5 3.268 164.5 0.054 78.2 0.975 –11.4
300 0.919 –26.2 3.223 156.2 0.080 72.6 0.951 –17.2
400 0.885 –33.8 3.139 148.7 0.102 67.2 0.920 –22.4
500 0.839 –41.8 2.969 141.8 0.123 62.2 0.887 –26.8
600 0.797 –49.5 2.833 135.1 0.141 58.1 0.851 –31.2
700 0.748 –56.3 2.699 129.2 0.157 54.5 0.815 –35.1
800 0.701 –63.3 2.611 123.2 0.169 51.1 0.776 –38.7
900 0.664 –69.9 2.473 117.9 0.181 47.9 0.743 –41.8
1000 0.625 –75.7 2.363 113.1 0.190 45.2 0.710 –44.7
1100 0.577 –82.3 2.254 108.3 0.198 43.0 0.680 –47.3
1200 0.545 –87.7 2.109 104.2 0.205 40.7 0.655 –49.3
1300 0.515 –93.8 2.011 101.3 0.210 39.1 0.633 –51.8
1400 0.475 –100.5 1.946 97.0 0.215 37.5 0.606 –54.0
1500 0.446 –105.5 1.863 93.7 0.219 36.2 0.584 –55.7
1600 0.421 –111.6 1.800 90.1 0.222 34.6 0.563 –57.7
1700 0.403 –117.9 1.732 87.2 0.225 33.7 0.545 –59.2
1800 0.387 –122.1 1.663 84.4 0.229 32.2 0.528 –60.9
1900 0.366 –129.0 1.614 81.6 0.230 31.7 0.512 –62.7
2000 0.354 –135.7 1.554 78.6 0.232 31.0 0.498 –64.1
10
Page 11
Unit: mm
0.3
+ 0.1
– 0.05
2.0 ± 0.2
0.65
0.65
1.3 ± 0.2
0.3
0.3
+ 0.1
– 0.05
+ 0.1
– 0.05
0.2
0.9 ± 0.1
0.425
1.25 ± 0.1
0.425
2.1 ± 0.3
Hitachi Code
JEDEC
EIAJ
Weight
+ 0.1
0.16
– 0.06
0 – 0.1
(reference value)
CMPAK
—
Conforms
0.006 g
Page 12
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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For further information write to:
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Tel: <49> (89) 9 9180-0
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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