SANYO 2SC3637 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Ordering number:EN1615C
2SC3637
Features
· High reliability (Adoption of HVP process).
· Fast speed.
· High breakdown voltage.
· Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2022A
[2SC3637]
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB
OBC OEC OBE
Tc=25˚C
009V 005V 7V 01A 02A 09W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloC
egatloVniatsaSrettimE-ot-rotcelloCV
tnerruCffotuCrettimEI
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
niaGtnerruCCD
emiTegarotSt
emiTllaFt
I I
h
V
OBC
V
SEC
I
)sus(OEC
C
V
OBE
I
)tas(EC
C
I
)tas(EB
C
V
EF
I
gts
C
I
f
C
I,V005=
BC EC
BE
EC
0=01Aµ
E
R,V009=
0=5.0Am
EB
I,Am001=
0=005V
B
I,V5=
0=1Am
C
I,A5=
A1=
B
I,A5=
A1=5.1V
B
I,V5=
A1=
C
I,A5=
I,A1=
1B
I,A5=
1B
A2–=
2B
I,A1=
A2–=
2B
N2098HA (KT)/4227KI/3095KI/N194KI, TS No.1615–1/4
nimpytxam
8
sgnitaR
2V
0.3sµ
1.02.0sµ
tinU
Switching Time Test Circuit
2SC3637
No.1615–2/4
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