SANYO 2SC3599, 2SA1405 Datasheet

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Ordering number:EN1764B

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1405/2SC3599

Ultrahigh-Difinition CRT Display

Video Output Applications

Applications

·Ultrahigh-definition CRT display.

·Video output.

·Color TV chroma output.

·Wide-band amp.

Features

· HighTf: fT typ=500MHz.

· High breakdown voltage : V ≥120V.

CEO

·Small reverse transfer capacitance and excellent high-frequnecy characteristic

:Cre=2.5pF (NPN), 3.8pF (PNP).

·Complementary pair with the 2SA1405/2SC3599.

·Adoption of FBET process.

( ) : 2SA1405

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2009B

[2SA1405/2SC3599]

1 : Emitter

2 : Collector

3 : Base

JEDEC : TO-126

Parameter

Symbol

Conditions

Ratings

Unit

 

 

 

 

 

Collector-to-Base Voltage

VCBO

 

(–)120

V

Collector-to-Emitter Voltage

VCEO

 

(–)120

V

Emitter-to-Base Voltage

VEBO

 

(–)4

V

Collector Current

IC

 

(–)300

mA

Collector Current (Pulse)

ICP

 

(–)600

mA

Collector Dissipation

PC

 

1.2

W

 

 

Tc=25˚C

8

W

 

 

 

 

 

Junction Temperature

Tj

 

150

˚C

 

 

 

 

 

Storage Temperature

Tstg

 

–55 to +150

˚C

 

 

 

 

 

Electrical Characteristics at Ta = 25˚C

Parameter

Symbol

Conditions

 

Ratings

 

Unit

 

 

 

 

 

 

min

typ

max

 

 

 

 

 

 

 

 

Collector Cutoff Current

ICBO

VCB=(–)80V, IE=0

 

 

(–)0.1

µA

Emitter Cutoff Current

IEBO

VEB=(–)2V, IC=0

 

 

(–)1.0

µA

DC Current Gain

hFE1

VCB=(–)10V, IC=(–)50mA

40*

 

320*

 

 

hFE2

VCE=(–)10V, IC=250mA

20

 

 

 

Gain-Bandwidth Product

fT

VCE=(–)10V, IC=(–)50mA

 

500

 

MHz

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=(–)70mA, IB=(–)7mA

 

 

0.6

V

 

 

 

 

 

(–)0.8

V

 

 

 

 

 

 

 

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=(–)70mA, IB=(–)7mA

 

 

(–)1.0

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=(–)10µA, IE=0

(–)120

 

 

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=(–)1mA, RBE=

(–)120

 

 

V

Emitter-to-Base Breakdown Votage

V(BR)EBO

IE=(–)100µA, IC=0

(–)4

 

 

V

Output Capacitance

Cob

VCB=(–)30V, f=1MHz

 

2.9

 

pF

 

 

 

 

(4.3)

 

pF

 

 

 

 

 

 

 

Reverse Transfer Capacitance

Cre

VCB=(–)30V, f=1MHz

 

2.5

 

pF

 

 

 

 

(3.8)

 

pF

 

 

 

 

 

 

 

* : The 2SA1405/2SC3599 are classified by 50mA hFE as follows :

40 C 80 60 D 120 100 E 200 160 F 320

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71598HA (KT)/12696TS (KOTO) X-7233/3237KI/2225MW, TS No.1764-1/4

SANYO 2SC3599, 2SA1405 Datasheet

2SA1405/2SC3599

No.1764-2/4

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