Ordering number:EN1763B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1404/2SC3598
Ultrahigh-Difinition CRT Display
Video Output Applications
Applictions
·Ultrahigh-definition CRT display.
·Video output.
·Color TV chroma output.
·Wide-band amp.
Features
· HighTf : fT typ=500MHz.
· High breakdown voltage : V ≥120V.
CEO
·Small reverse transfer capacitance and excellent high-frequency characteristic
:Cre=1.6pF (NPN), 2.1pF (PNP).
·Complementary pair with the 2SA1404/2SC3598.
·Adoption of FBET process.
( ) : 2SA1404
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2009B
[2SA1404/2SC3598]
1 : Emitter
2 : Collector
3 : Base
JEDEC : TO-126
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
(–)120 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
(–)120 |
V |
Emitter-to-Base Voltage |
VEBO |
|
(–)4 |
V |
Collector Current |
IC |
|
(–)200 |
mA |
Collector Current (Pulse) |
ICP |
|
(–)400 |
mA |
Collector Dissipation |
PC |
|
1.2 |
W |
|
|
Tc=25˚C |
8 |
W |
|
|
|
|
|
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=(–)80V, IE=0 |
|
|
(–)0.1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=(–)2V, IC=0 |
|
|
(–)0.1 |
µA |
DC Current Gain |
hFE1 |
VCE=(–)10V, IC=(–)10mA |
40* |
|
320* |
|
|
hFE2 |
VCE=(–)10V, IC=(–)150mA |
20 |
|
|
|
Gain-Bandwidth Product |
fT |
VCE=(–)10V, IC=(–)50mA |
|
500 |
|
MHz |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)50mA, IB=(–)5mA |
|
|
0.6 |
V |
|
|
|
|
|
(–0.8) |
V |
|
|
|
|
|
|
|
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(–)50mA, IB=(–)5mA |
|
|
(–)1.0 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)120 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)120 |
|
|
V |
Emitter-to-Base Breakdown Votage |
V(BR)EBO |
IE=(–)100µA, IC=0 |
(–)4 |
|
|
V |
Output Capacitance |
Cob |
VCB=(–)30V, f=1MHz |
|
2.0 |
|
pF |
|
|
|
|
(2.7) |
|
pF |
|
|
|
|
|
|
|
Reverse Transfer Capacitance |
Cre |
VCB=(–)30V, f=1MHz |
|
1.6 |
|
pF |
|
|
|
|
(2.1) |
|
pF |
|
|
|
|
|
|
|
* : The 2SA1404/2SC3598 are classified by 10mA hFE as follows :
40 C 80 |
60 D 120 |
100 E 200 |
160 F 320 |
|
|
|
|
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/12696TS (KOTO) X-7234/3237KI/2225MW, TS No.1763-1/4
2SA1404/2SC3598
No.1763-2/4
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